The M-2000DUV Spectroscopic Ellipsometer. The ellipsometer measures 505 wavelengths covering 193 to 1000nm, ideal for semiconductor applications. Optical constants are measured at each lithograph line (193nm, 248nm, 365nm...). The entire spectrum of data is acquired in a fraction of a second.
Dielectric film thickness measurement, using spectroscopic reflectometry (450-920 nm). Film thickness from 50 nm to 25 micron with accuracy of 1 nm
Faculty of Engineering, Microfabrication facility
$75
$50
$105*
$105
Mark Oksman
MNCF Director
036407926
XRF EX3600, Jordan Valley
X-ray fluorimeter system for specimen composition analyses and non destructive film thickness measurements
Faculty of Engineering, Microfabrication facility
$75
$50
$105*
$105
Mark Oksman
MNCF Director
oksman@eng.tau.ac.il
036407926
Olympus MX-40, Olympus MX-50
Inspection Microscopes
Faculty of Engineering, Microfabrication facility
$75
$50
$105*
$105
all users
MNCF Director
036407926
Wafer dicing saw K&S 982-6 Plus
The K&S Model 982 is a Precision Dicing System having automated process control. The 982 Series is intended primarily for dicing applications on semiconductors and piezo-electric materials and it is characterized by a 2-inch spindle, allowing use of 2” and 3” blades, and can accommodate wafer-type substrates up to 6" in diameter. In addition, the 2” blade offers improved stability for better quality.
Faculty of Engineering, Microfabrication facility
$75
$50
$105*
$105
Maurice Saidian
MNCF Director
oksman@eng.tau.ac.il
036407926
Ultra Tec MULTIPOL polisher
Polisher
Faculty of Engineering, Microfabrication facility
$75
$50
$105*
$105
MNCF Director
036407926
* NOTE: 50% DISCOUNT FOR $10,000 OPEN ORDER; 25% DISCOUNT FOR $5,000 OPEN ORDER for internal users, $55/hour operator cost for ACADEMIA, $105/hour operator cost for Industry
"התעריפים המצוינים בקובץ זה נכונים לחודש יוני 2010. בכל מקרה של סתירה בין תעריפים אלו והתעריפים המפורסמים באתרי מרכזי התשתית בטכניון, יהיו התעריפים המופיעים באתרי מרכז התשתית בטכניון הקובעים".
The RAITH E-Line is an electron beam lithography system designed for R&D of III-V transistors as well as process development and prototype engineering for optical elements, X-ray masks, and Silicon devices. It is also used for research of new devices that require ultra fine pattern exposure, including quantum effect devices.
PMMA is the standard positive e-beam resist, usually purchased in two high molecular weight forms (495K or 950K) in a casting solvent such as chlorobenzene or anisole. Electron beam exposure breaks the polymer into fragments that can be dissolved in a 1:1 MIBK:IPA developer.
Electrical Engineering, Kidron Microelectronics Research Center Note: Internal grants for Technion and Academia researchers
GCA stepper is a 5x 0,35NA stepper with environmental control. Uses 5"x5" soda lime reticles 365 nm optics. Capable of features down to 0.7 mkm in size. capable of 0.25 mkm pattern global overlay, and 0.15 mkm local. Features on the mask are reduced 5x down to the printed feature size. Excellent tool for larger feature sizes. Field 11.3 x 11.3 mm, depth of focus 1.49 mkm
Electrical Engineering, Kidron Microelectronics Research Center
The Plasma-Therm ICP reactive ion etcher has a load-locked chamber and is used for chlorine-based etching of compound semiconductors such as GaAs, GaN, InP and related materials. The system currently has three reactive gases available Cl2, BCl3,HBr. The system is equipped by a turbomolecular pump and capable to run processes at 1-2 mTorr pressures. The system has a four inch wafer helium cooled chuck which accommodates whole wafers or small pieces taken on 4 inch carrier wafer. The system is equipped by end point detection system. Wafer temperature range can be determined between -60 oC to 150 oC.
Electrical Engineering, Kidron Microelectronics Research Center
300$+ 100$ clean room hour
300$+ 100$ clean room hour
300$+ 100$ clean room hour
http://webee.technion.ac.il/labs/nano/
shneider@ee.technion.ac.il
04-8294205
ICP deep RIE Plasma Therm Versaline
The Plasma-Therm ICP reactive ion etcher has a load-locked chamber and is used for fluorine-based etching of silicon,silicon oxide and nitride. The system can run BOSH like processes for silicon and glass. The system currently has three reactive gases available CF4, CHF3,SF6. The system is equipped by a turbomolecular pump and capable to run processes at 1-2 mTorr pressures. The system has a six inch wafer helium cooled chuck which accommodates whole wafers or small pieces taken on 6 inch carrier wafer. The system is equipped by end point detection system. Wafer temperature range can be determined between -10 oC to 70 oC.
Electrical Engineering, Kidron Microelectronics Research Center
The Nanospec/AFT is a computerized film thickness measurement system. The Nanospec uses light from a white source which is passed through a diffraction grating to disperse the light into its component wavelengths, from 380 to 780 nanometers. The interference of the light waves is then measured using several algorithms and the thickness is determined. This instrument offers programs on eleven specific film types, relative reflectance, and multipurpose thick film capability. The Nanospec only works with dielectric films. The range of the instrument extends from less than 100 angstroms to 400K angstroms, with a reproducibility of plus/minus 2 percent to plus/minus 5 percent.
MNFU (Microelectronics Research Center)
The MNFU (micro nano fabrication unit) is the Microelectronics Research central facility for processing and characterization of semiconductor devices. It is located, mainly, in the Wolfson building clean-room area. The facility serves the researchers and the students in the microelectronics reasearch center, as well as other users from the Technion, other israeli universities, and Israeli industry.
Prospect users of the MNFU equipment should consult the MNFU manager Eng. Jacob Shneider at shneider@ee.technion.ac.il
http://webee.technion.ac.il/labs/nano/
shneider@ee.technion.ac.il
04-8294205
Four Point Probe FPP 5000 VEECO
The four point probe is an instrument to measure resistive properties
(such as: sheet resistance, dopant type, slice resistivity and film thickness) of semiconductor wafers and resistive films based on a four point voltage/current measurement. The FPP5000 is designed so that the wafer moves into the probe head to insure a constant force. Any size sample from 1 cm to a 4" wafer can be measured
MNFU (Microelectronics Research Center)
http://webee.technion.ac.il/labs/nano/
shneider@ee.technion.ac.il
04-8294205
ALPHA-STEP 500, Surface profiler, TENCOR
The Alpha-Step 500 is a microprocessor - based surface profiler used for making accurate measurements on vertical features ranging in height from less than 50 angstroms to 300 micrometers. Alpha Step 500 acquires data by moving the stylus beneath the sample. Vertical movements of the stylus are sensed by a transducer, digitized and stored in the memory for later plot manipulation. Profiler provides two dimensional analysis of surface topography on various surfaces with a resolution of 1 Å and a repeatability of 10 Å (1sigma) or 0.1%
The Gaertner Scientific Corporation L116C is a single wavelength variable angle ellipsometer using 632.8 nm line of a He:Ne laser for measuring film thickness and refractive index. The typical angle of incidence is 70 degrees. Measurement resolution of 3-10 A on thickness and 0.01 refractive units are typical.
The L116C is a traditional rotating analyzer and the variable angle feature gives more flexibility to analyze more difficult and near period films. Standard DOS based software is used to calculate the parameters. The ellipsometer measures the change in state of polarized light upon reflection from a surface. The state of polarization is determined by the amplitude ratio of the parallel (p) and perpendicular (s) components of radiation, and the phase shift difference between the two components.
