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Scientific and practical values of the research results.
The
theoretical
significance of the study results of this dissertation lies in revealing the
mechanisms of operation of one-chlorine-based catalyst in heterogeneous catalysis
and natrium ethylate in catalytic disproportionation
. The knowledge obtained in
the course of the work implementation allowed better understanding of the
physical-chemical processes of synthesis and selection of optimal conditions for
chemical reactions in the required direction. The revealed mechanisms of the ion
effect on the growth surface will be useful for prediction of some parameters of
formed structures.
Practical significance of the developed monosilane technology is that this
technology allows a significant decrease in cost price of the products and an
increase in its competitive ability at the world market. Important practical
significance has a method of separation and control of charged particle flows and
an apparatus for its realization. The proposed method and created device has no
analogs in the world and fully compatible with the equipment of molecu
lar-beam
epitaxy. Potentially this device can be used for each of the high
-vacuum and
ultrahigh-vacuum installations of growth where there are electron-beam
evaporations. The direct economic effect of the applied development is formed by
saving the funds for purchase of ion sources and complicated electronic systems of
ion source control. Besides, the
operating costs are minimized.
Application of the research results.
Due the process of developing of
monosilane technology of polycrystalline silicon, and ion
-stimulated methods of
creation of silicon structures
:
o
n the basis of the new developed technology of alkoxysilanes synthesis by
direct reaction metallurgical silicon and alcohol were received 7 patents in seven
countries
:
«
A m
ethod for preparing trialkoxysilane» (IAP05023,
31.03.2015,
Uzbe-
kistan), «
A m
ethod for preparing trialkoxysilane» (US9156861, Oct
ober
13,
99
2015, USA), «
A m
ethod for preparing trialkoxysilane» (JP5836489,
Dec. 24,
2015
,
Japan), «
A m
ethod for preparing trialkoxysilane» (EP2754664,
Ju
ly 16,
2014
,
EU), «
A m
ethod for preparing trialkoxysilane» (TW201339094,
October 01,
2013
,
Taiwan), «
A m
ethod for preparing trialkoxysilane» (CN103797018,
May 14,
2014
,
China), «
A m
ethod for preparing trialkoxysilane» (KR101422080,
July 16,
2014
,
Korea Republic).
S
imultaneous application of technical solutions such as
milling of silicon in a solvent medium
, dosed feed of suspension into the reactor,
removing excess of solvent together with dissolved therein impurities
and
excluded the induction period
prov
ides maintain a constant amount of silicon,
catalyst, and solvent in the entire period of a synthesis process and ultimately
implement fully continuous pr
ocess of alkoxysilane synthesis;
on the basis of the new developed technology of monosilane synthesis by
catalytic disproportionation of trialkoxysilanes
were received 7 patents in seven
countries
:
«A method for preparing monosilane by using trialkoxysilane»
(IAP05179,
31.03.2016,
Uzbekistan
), «A method for preparing monosilane by
using trialkoxysilane», (US9278864,
March 8, 2016,
USA), «A method for
preparing monosilane by using trialkoxysilane»
(JP2015535802,
December 17,
2015
,
Japan
), «A method for preparing monosilane by using trialkoxysilane»
(EP
2905258
, August 12, 2015,
EU), «A method for preparing mo
nosilane by using
trialkoxysilane»
(TW201425222,
July 01, 2014,
Taiwan), «A method for preparing
monosilane by using trialkoxysilane»
(CN
104797527
,
July 22, 2015,
China),
«A
method for preparing monosilane by using trialkoxysilane»
(KR101532142,
June
26, 2
015
, Korea Republic). T
he proposed technical solutions the separation of the
products of alkoxysilanes synthesis, trialkoxysilanes
selection
, preparation of the
catalyst and purification of monosilane provide deep purification of
trialkoxysilane
and monosi
lane in a short manufacturing cycle, increasing the productivity of the
process and the impleme
ntation of a continuous process;
on the basis of the developed method of separation and control the flow of
charged particles and device for its implementation - ion probe received a patent
“A method of separation and control the flow of charged particles and device for
its implementation”
(IAP 02958, 29 Dec., 2005, Uzbekistan). With the help of the
proposed solutions: increased the doping level of antimony atoms
embed in a
silicon crystal lattice by ion-stimulated method during the
growth; carried out an
ion-
stimulated relaxation of stresses in the heterostructures, and experimentally
demonstrated the possibility of controlling the degree of stress relaxation in
h
eterostructures; it was formed an array of germanium nanoislands on the silicon
surface by ion-
stimulated molecular beam epitaxy, and the increase in density and
narrowing of the size distribution function under ion irradiation was shown; it was
found the
expression at temperatures above 500K thermovoltaic properties of film
silicon p-n structures obtained by the ion-
stimulated vacuum deposition; created an
intermediate layers with a chemical affinity and gradient transition to adjust of
thermal barrier coatings by ion-stimulated method.
the development of monosilane technology of polycrystalline silicon and the
establishment of the experimental plant was attracted foreign investment from
South Korean company OCI in the amount of 500,000 US dollars.
(Act of
100
06.12.2012, on the completion of the Contract between the Institute of ion
-plasma
and laser technologies and OCI Company from 17.08.2010 years).
Beside the
interest one of the leading companies and one of the top three largest producers of
polysilicon, confirming the high level of development, attracted investment
allowed to create a new innovation technology and the installation, and equipped a
laboratory wit
h modern devices and equipments;
an agreement on granting a license for an invention patent
IAP
02958 the
"M
ethod of separation and control the flow of charged particles and device for its
realization" (The contract is registered in the AIS Uzbekistan №SIP 4/2016 from
01.04.2016,
"Rasmiy Ahborotnoma",
No.
5 (181), 2016,
p
.238)
.
This license
agreement all
ows the possibility of application the devolopment in production, and
also the implementation of high-tech products in the internal and foreign markets.
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