Академия наук республики узбекистан

The objects of the research 
are 
silicon crystals, silicon
-organic compounds 
(tri
- 
and tetraethoxysilanes), silicon compounds with hydrogen (silanes), epitaxial 
thin-film and multi-layer structures based on silicon etc. 
The subject of the research 
is the physical-chemical processes of synthesis 
of organic and hydride 
compounds of silicon, crystal growth, epitaxy growth and 
ion-stimulated processes of layer and cover formation. 
The methods of the research
are scanning electron microscopy 
(SEM) 
and 
scanning tunneling microscopy 
(STM), R
aman and 
Fourier transform infrared 
spectroscopy (
FTIR
), gas chromatospectrometry and mass spectrometry with 
inductively coupled plasma 
(
ICP
-
MS
)
.
The scientific novelty of the research 
consists of the following results
:
developed a technology of alkoxysilane synthesis on the basis of direct 
reaction of metallurgical silicon and alcohol. 
The technology is high selectivity
97 

---

relative to the 
main product (over 95%) and has a high degree of conversion (close 
to 100%);
excluded, for the first time, an induction period of the direct reaction of 
metallurgical 
silicon and ethyl alcohol, which allowed the technological process to 
run in a continuo
us mode;
proposed and realized a method of continuous activation of the reaction 
medium in alkoxysilane synthesis by way of removing the soluble impurities 
together with a solvent excess through a porous ceramic membrane;
developed a monosilane technology of polysilicon production with the use 
of alkoxysilanes. 
the absence of aggressive precursors and reaction intermediate products in 
the synthesis process allows a high degree of monosilane purity for single stage 
distillation;
proposed a new method of catalyst preparation for catalytic 
disproportionation 
of triethoxysilane. 
Natrium ethylate prepared in a medium of 
tetraethoxysilane, as a result of interaction of metallic natrium and absolute ethyl 
alcohol, has high activity and is easily regenerated ow
ing to which the process of 
monosilane synthesis can be performed at room temperature in continuous mode;
developed and created an experimental set
-up for polysilicon production 
on the basis of the monosilane technology where the new technology was 
succes
sfully tested and all the proposed technical solutions were realized;
proposed a method of separation and control of charged particle flows and 
an device 
for its realization, which allowed the ions generated under electron
-beam 
evaporation to be used for control and management of the processes on the growth 
surface;
increasing doping level reached to 10
19
cm
-3
by ion-stimulated antimony 
atoms embed in the crystal lattice of the silicon during the growth;
proposed and realized a method of ion-stimulated re
laxation of stresses in 
Si/Ge heterostructures during the growth;
it was found that the formation of germanium nanoislands on the silicon 
surface by ion-
stimulated molecular beam epitaxy maximizing the density and 
narrowing of the size distribution functio
n is achieved at 200eV an energy 
of 
ions;
it found that at temperatures above 500K the thermovoltaic properties of 
thin film silicon p-n structures obtained by the ion-stimulated by vacuum 
deposition is manifested
;
proposed a method of creation of intermediate layers with chemical 
affinity and gradient transition for adjustment of thermal barrier coatings by the 
ion-stimulated method.