References k. Graff, Metal Impurities in Silicon-device Fabrication, 2nd ed. Springer, Berlin, 2001

N. A. Yarykina and J. Weber. Interaction of Copper Impurity with Radiation Defects in Silicon Doped with Boron. Semiconductors, 2010, Vol. 44, No. 8, pp. 983–986.

N. A. Yarykina and J. Weber. Interaction of Interstitial Copper with Isolated Vacancies in Silicon. Solid State Phenomena. 2016, Vol. 242, pp 308-311. doi:10.4028/www.scientific.net/SSP.242.308

F. Heinz et.al. Interstitial chromium in silicon on the micron scale. Energy Procedia. 38(2013), pp.571–575.

D. Macdonald, J. Tan, and T. Trupke, Imaging interstitial iron concentrations in boron-doped crystalline silicon unsing photoluminescence. J. Appl. Phys. 103, 073710 (2008).

D. Macdonald, J. Tan, and T. Trupke, Imaging interstitial iron concentrations in boron-doped crystalline silicon unsing photoluminescence. J. Appl. Phys. 103, 073710 (2008).

M. C. Schubert, H. Habenicht, and W. Warta, Imaging of Metastable Defects in Silicon. Photovoltaics, IEEE Journal of 1 (2), 168 (2011).

L. Scheffler, Vl. Kolkovsky, and J. Weber. Isolated substitutional cobalt and Co-related complexes in silicon. Journal of Applied Physics 113, 183714 (2013); doi: 10.1063/1.4804321.

Ayumi Onaka-Masada. Low-temperature annealing behavior of iron-related deep levels in n-type silicon wafers. Japanese Journal of Applied Physics 55, 021301 (2016). http://doi.org/10.7567/JJAP.55.02130