References k. Graff, Metal Impurities in Silicon-device Fabrication, 2nd ed. Springer, Berlin, 2001

D. Graff, Metal impurities in silicon-device fabrication (2000) (Springer, Heidelberg, Germany). https://doi.org/10.1007/978-3-642-57121-3

T. Roth, P. Rosenits. Electronic properties and dopant pairing behavior of manganese in boron-doped silicon. Journal of Applied Physics 102, 103716 (2007); doi: 10.1063/1.2812698

Xiaobo Chen, Xiaodong Pi, and Deren Yang. Silicon nanocrystals doped with substitutional or interstitial manganese. Applied Physics Letters 99, 193108 (2011); doi: 10.1063/1.3660233.