Академия наук республики узбекистан

Connection of the dissertational research with the plans of scientific 
research works.
The dissertation research is carried out according 
to the plan of 
scientific and technical work of the Institute of ion-plasma and laser technologies 
in the framework of research projects
FА
-
А4
-
F057«
Development of technological 
scheme of polysilicon production
» (2015
-
2017), 
A4-
FА
-
F172 «
Development of 
technology of production of thin-
layer, granulated and volume crystals of silicon 
from monosilane
»
(2012
-
2014), FA
-A15-
F126 «
Development of technology and 
equipment for production of polycrystalline silicon»
(2009
-
2011), FA
-
F2
-
F097 
“
Study of growth processes o
f nano-islands and centers of crystallization of 
organic and inorganic materials” (2007
-
2011), bilateral projects under 
Intergovernmental agreement about scientific-technical cooperation between the 
Republic of Uzbekistan and Germany USB001/99
“Application of ion beams in 
molecular-
beam epitaxy” jointly with Stuttgart University (1999
-
2001), 
UZB02/002
“Formation of protective covers on 
reinforced carbon substrates by 
methods of chemical vapor deposition (CVD) and ion
-activated physical vapor 
deposition (
IA 
PVD)” (2003
-
2005), UZB
01/007
“ Relaxation control in SiGe/Si
heterostructures under in-situ ion bombardment for ultraspeed 
field transistors” 
(2007
-
2009)
.
96

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The purpose of the research
research
is to develop a monosilane technology 
of polysilicon production and ion-stimulated methods for creation of silicon 
structures. 
To achieve the purpose the following