Академия наук республики узбекистан

Degree of study of the problem. 
The scientist of Silicon
Solar
Inc. 
(USA) 
developed a method of monosilane production from trietoxysilane with catalyst 
KF/
Al
2
O
3
(Patent WO
042445A
2, 2008)
where the reagent conversion was 
achieved close to 100%. Showa
Denko K.K. 
(Japan) also achieved the maximally 
high results for trialkoxysilane conversion (JP2008281206, US
20110200513
); 
however, the result was achieved for trimetoxysilane only. From 2000 to 2010 
Momentiv
e 
Performance
Materials
Inc. 
(USA) patented several technologies of 
trietoxysilane synthesis with catalysts on the basis of Cu
2
O, CuCN
and 
Cu(OH)
2
(Patents US7429672, US7339068, US7652164); however, all the reactions run in a 
continuous-
cyclic mode. Such a
mode means that the reagent feeding is realized 
periodically; the reaction after the induction period runs non
-continuously and then 
stops. The problem of induction period of direct reaction of 
metallurgical silicon 
and low spirits restrains commercial ap
plication of this technology. Therefore, 
development of an effective monosilane technology for polysilicon production 
remains an actual problem. 
95 

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The ions for activation of surface processes, particularly for formation of 
silicon-
based structures, have been
used for a long time. The scientific group from 
Stuttgart University (Germany) applies ions for stimulation of the growth 
processes of molecular-
beam epitaxy (E.Kasper and others) and electron
-beam 
deposition of vapor (K.Maile, A.Lyutovich).
K.Nordlund an
d F.Dzhurabekova 
(Helsinki, Finland) are actively engaged in the study of radiation effects, changing 
radically the properties of materials based on the interaction of ions with solids. 
The ion
-stimulated methods are successfully developed and used for studies 
and applications by the scientific group from Nijniy Novgorod (Russia). The 
studies of the physical processes under ion irradiation of the silicon surface 
implanted with different impurities and the development of physical fundamentals 
for impurity doping of silicon layers and those of solid solutions silicon-
germanium under low-energy ion irradiation are carried on by the scientific group 
of Shengurov V.G. Irradiation of crystalline silicon with super
-high doses of rare 
gas leads to formation of a new allotropic 
form of silicon (Mishin A.I.). The 
formation processes of nanostructural systems composed of silicon nano-inclusions 
in an amorphous Si matrix are actively studied by Trushin S.A. In most cases the 
researchers use special sources of ions to make an effect on the growth surface in 
molecular-
beam epitaxy, for example the group of Dvurechenskiy A.V. 
(Novosibirsk) studies self
-organization of Ge nano-islands on silicon under pulse 
irradiation with a beam of low-energy ions. Despite the success achi
eved, for many 
proposed methods to be realized it is necessary to have complicated systems of ion 
sources that can be incompatible with standard equipment of high
-vacuum 
deposition, particularly set
-ups of molecular-
beam epitaxy. Therefore, 
developments of methods of ion generation by electron-beam evaporation for 
activation of the surface processes are of great demand.