Өзбекстан республикасы жоқары ҳӘм орта арнаўлы билим министрлиги

The object of research. Consists of semiconductor diodes with a structure.
The subject of research is the physical basis of the mechanisms of formation of diode structures, diode structures with negative differential resistance, current and voltage characteristics.
The aim of this study is to determine the mechanisms of formation of negative differential resistance in semiconductor diodes.
Research objectives:
1. Review of a wide range of literature on scientific papers published in monographs, scientific conferences and scientific journals that meet the requirements of the Higher Attestation Commission on the topic of the master's dissertation.
2. Get acquainted with the relationship of theoretical research with experimental experiments and perform numerical calculations.
3. Develop an algorithm for numerical calculation of the frequency characteristics of semiconductor diodes with a simultaneous voltamper characteristic and determine the values of the real part of the impedance depending on the frequency.
Scientific novelty of the research:
1. An algorithm for the numerical calculation of the frequency response at any point of the voltammetric characteristic of long diodes with a compensated base and the impedance of the semiconductor diode with a characteristic S-shaped voltammeter connected to the mechanism has been developed.
2. It was found that in the case of asymmetric retention of electrons and holes in the centers located in the pit, S-shaped VAX is observed in the MDQ fragments, such diodes have inductive properties.
3. Based on the calculations, it is shown that the real part of the impedance passes from zero (as well) with increasing frequency and becomes positive.
The scope and structure of the dissertation. The content of the master's dissertation consists of an introduction, three chapters, a conclusion, a list of references, 12 figures, a list of 51 references, and it is described on 72 pages.