Өзбекстан республикасы жоқары ҳӘм орта арнаўлы билим министрлиги

The main results of the research. The time of formation of non-basic charge carriers in compensated semiconductors depends on the injection level, its dynamic characteristics were found. An S-shaped voltammetric characteristic was studied in asymmetric capture in the deep layers of charge carriers, where electric oscillations were present around a section with a negative differential resistance. The generation of electrical oscillations was found to have a diode capacitance characteristic of high originality.


Summary
The following conclusions and recommendations have been developed based on the research conducted on this dissertation:
1. A numerical calculation algorithm has been developed that is effectively used in calculating the impedance of a semiconductor diode with the resulting voltammeter characteristic. As an example, the mechanism of the drop part of the VAX characteristic in long diodes with a compensated base is considered. In this case, the continuity equation for current carriers is reduced to an equation in which the coordinate dependence of the hole area can be established.
2. Computational experiments are presented. And with and numeric values. The VAX characteristic has a distinct C-shaped characteristic. Two turning points are observed, their ratio is , the ratio of the currents at these points is . . (symmetrical capture of carriers in deep centers) no MDQ field is observed.
3. The results of computational experiments on the dynamic characteristics of the MDQ show that the real part of the MDQ has a negative value with respect to small particles, then passes through zero with increasing frequency and becomes a positive value. The abstract part of the MDQ is equal to zero when . As the frequency increases, it increases in the field of negative values. has a maximum around , which decreases in absolute value and when it becomes a positive value at.

Research advisor: _______________ PhD, doc. Muratov A.S.

Master’s student: _______________ Kulbayev G.G