Analysis of Si: Ge Heterojunction Integrated Injection Logic (I-/sup 2/L) Structures Using a Stored c electron Devices, ieee transactions on

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Analysis of Si:Ge heterojunction integrated injection logic (I2L) structures using
a stored charge model
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IEEE Transactions on Electron Devices · January 1999
DOI: 10.1109/16.735720 · Source: IEEE Xplore
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IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 45, NO. 12, DECEMBER 1998
2437
Analysis of Si:Ge Heterojunction Integrated Injection
Logic (I L) Structures Using a Stored Charge Model
Simon P. Wainwright,
Member, IEEE,
Stephen Hall,
Member, IEEE,
Peter Ashburn,
Member, IEEE,
and Andrew C. Lamb
Abstract— A quasi-two-dimensional stored charge model is
developed as an aid to the optimization of SiGe integrated
injection logic (I
2
L) circuits. The model is structure-based and
partitions the stored charge between the different regions of
the I
2
L gate. Both the NpN switching transistor and the PNp
load transistor are correctly modeled and the effects of series
resistances on the gate operation are taken into account. The