12-rasm. Turli haroratlarda kollektor-baza o'tishining yopilish rejimida tokning kuchlanishga bog'liqligi
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Xususan, bunday toklarda haroratning oshishi bilan kuchlanishning kamayishi chiziqli bo'ladi, bu esa uning haroratni o'lchash parametri sifatida qo'llanilishini tasdiqlaydi.
Kollektor-baza p-n-o'tishning yopilish rejimida berilagan haroratda kuchlanishining oshishi bilan tok o'zgarmaydi (12-rasm), haroratning oshishi bilan esa tokning harorat koeffitsiyenti oshishi tok qiymatini chiziqli ravishda kattalashtiradi: (3.14)
Demak, kollektorning teskari tokini ham o'lchov parametri sifatida ishlatish mumkin.
1 –30 °С, 2 –50 °С.
13-rasm. Ikki qutbli ulash rejimida (-)p-n-p (+) suzuvchi (erkin) bazali kollektorli o'tishning yopilishida tokning kuchlanishga bog'liqligi
13-rasmda (-)p-n-p+(+)- struktura ishchi tokining ortishini tokning o'tkazish koeffitsenti kollektor-emitter kuchlanishiga bog'liqligi va harorat ortishi bilan kattalashishi orqali tushuntirish mumkin, bu esa tashuvchilarning kollektorli o'tishida generatsiyalanadigan miqdori oshishi bilan izohlanadi.
Bunda emitterli o'tishning qarshiligi haroratning ta'siriga, kollek-torli o'tishning qarshiligi esa yopilish kuchlanishiga sezgirroq bo'ladi. Shuning uchun (-)p-n-p+(+)-strukturali tranzistor ikki qutbli rejimda ulanishida alohida olingan dioddan yuqori harorat sezgirlikka va kichik ishchi tokka ega bo'ladi. Bunday datchiklar aviatsiya, avtomobilь va boshqa ishlab chiqarish sohalarida qo'llanilishi jihatidan ahamiyatga ega.
Foydalanmilgan adabiyotlar:
Karimov A.V., Djurayev D.R., Turaev A.A. Physical-technological aspects of a multifunctional sensor based on a field-effect transistor // World Journal of Engineering Research and Technology, 2017, Vol. 3, Issue 2, 57 – 63. (№23, SJIF IF=4.326).
Karimov A.V., Djurayev D.R., Turaev A.A. Investigation temperature sensitivity of the field-effect transistor in channel depletion mode // Journal of Scientific and Engineering Research, 2017, 4(2):1-4. (№5,GIF, IF=0.325)
A.V. Karimov, D.R. Dzhuraev, Sh.M. Kuliev, and A.A. Turaev. Distinctive features of the temperature sensitivity of a transistor structure in a bipolar mode of measurement. // Journal of Engineering Physics and Thermophysics, Vol. 89, No. 2, March, 2016. P.514-517. (№40, Research Gate, IF=0.500)
Karimov A.V., Djuraev D.R., Abdulhaev O.A., Rahmatov A.Z., Yodgorova D.M., A.A.Turaev. Tenso properties of field-effect transistors in channel cutoff mode // International Journal of Engineering Inventions 2278-7461, Volume 5, Issue 9 [Oct. 2016] -PP 42-44. (№5,GIF, IF=0.325)
Karimov A.V., Djurayev D.R., Yodgorova D.M., Abdulxayev O.A., Turayev A.A. Osobennosti chuvstvitelьnosti poluprodnikovыx mnogof-unktsionalьnыx datchikov pod vneshnim vozdeystviyem // Buxoro davlat universiteti ilmiy axboroti 2016/3(51) B. 8-11. (01.00.00. №3)
Turayev A.A., Saidov K.S. Dinamik yuklamali sxemada maydoniy tranzistorning kuchaytirish xossalari // Buxoro davlat universiteti ilmiy axboroti. 2016/4(64) B. 31-35. (01.00.00. №3)
Karimov A.V., Yodgorova D.M., Kamanov B.M., Turayev A.A. Fotovolьtaicheskiy effekt v diodnom rejime vklyucheniya polevogo tranzistora // Geliotexnika. 2015, №4, S.87-90. (01.00.00.№1)
Abdulkhaev O.A., Yodgorova D.M., Karimov A.V., Kamanov B.M., Turaev A.A. Features of the temperature properties of a field-effect transistor in a current-limiting mode // Journal of Engineering Physics and Thermophysics. Springer. 2013, Vol. 86, No. 1, pp. 248-254. (№40, Research Gate, IF=0.500)
Turayev A.A. Yarimo'tkazgichli diodlarning p-n, nuqtali, elektron teshik-chali o'tishi // Buxoro davlat universiteti ilmiy axboroti. 2013/3(51) B. 8-11. (01.00.00. №3)
II bo'lim (II chastь; II part)
Djurayev D.R., Turayev A.A., Bebitov R.R. Issledovaniye temperaturnoy chustvitelьnosti polevogo tranzistora v rejime zapiraniya napryajeniyem stok-zatvor // Respublikanskaya nauchnaya konferentsiya «Neravnovesnыye protsessы v poluprovodnikax i poluprovodnikovыx strukturax» k 70 – letiyu akademika AN RUz A.T.Mamadalimova. 1-2 fevralya 2017. – Tashkent. S.90-92.
Abdulkhayev O.A., Dzhurayev D.R., Yodgorova D.M., Karimov A.V., Rakhmatov A.Z., Turayev A.A. Physico-technological aspects multi-functional sensor on field-effect transistor // New Trends of Development Fundamental and Applied Physics: Problems, Achieve-ments and Prospects 10-11 November 2016, Tashkent, Uzbekistan. PP: 231-234.
Djurayev D.R., Turayev A.A. Stokovыx xarakteristika polevogo tranzis-tora // “Kondensatlangan muhitlar fizikasi va fizika o'qitishning dolzarb muammolari” xalqaro ishtirokchilar bilan respublika ilmiy-amaliy anjumanlar to'plami. 8-9 iyulь 2016. Namangan. B.152-155.
Djurayev D.R., Yodgorova D.M., Turayev A.A. Mnogofunktsionalьnыy datchik na osnove polevogo tranzistora // Sovremennыy problemы fiziki kon-densirovannogo sostoyaniya – SPFKS-2016 tezisы dokladov respubli-kanskoy nauchnoy konferentsii 12-14 aprelya 2016. Buxara. S.157-159
Djurayev D.R., Karimov A.V., Kuliyev Sh.M., Turayev A.A. Modulь priyoma opticheskix signalov s vxodnыm kaskadom na polevom fototranzistore // Mejdunarodnaya konferentsiya «Fundamentalьnыye voprosы fiziki» 5-6 noyabrya 2015. – Tashkent. S.203-205.
Turayev A.A. Maydon tranzistorlarining xossalari // Zamonaviy fizika va astrofizikaning dolzarb muammolari. III respublika ilmiy-amaliy anjumani. 2015. Qarshi. B.82-85.
Turayev A.A. Atmosfera optik aloqa sistemalarida maydon tran-zistorlari asosidagi ko'p funktsional datchiklardan foydalanish // “XXI asr-intelektual avlod asri” yosh olimlar va talabalarning respublika ilmiy-amaliy anjumani materiallari. 19-20 noyabrь 2015. Toshkent. B.182-187.
Karimov A.V., Djurayev D.R.,Yodgorova D.M., Turayev A.A. Priyomnik opticheskogo signala na polevom tranzistore // Sbornik materialov Mejdunarodnoy nauchno-prakticheskoy konferentsii 27-30 iyun 2014. Chexiya. Praha Publishin House s.r.o S.56-58.
Turayev A.A., Niyazov L.N. Atmosfernыye opticheskiye linii svyazi novogo pokoleniya // The 8th Intenational Conference “Modern achievements of physics and fundamental physical education” October, 9-11, 2013. Kazakhstan, Almaty Book of Abstracts. S.256-258.
Djurayev D.R., Yodgorova D.M., Karimov A.V., Turayev A.A. Osoben-nosti napryajeniya otsechki kanala polevogo tranzistora // Namangan davlat universiteti “Yarim o'tkazgichlar fizikasi va qurilmalari hamda ularni o'qitishning muammolari” hududiy ilmiy anjuman. 26-aprel 2013. Namangan. B.119-120.
Turayev A.A., Djurayev D.R. Maydon tranzistorlari va ularning tashqi ta'sirlarga sezgirligi (magnit maydonga, namlikka, yorig'likka) // Navoiyskiy gosudarstvennыy gornыy institut VI mejdunarodnaya nauchno-texnicheskaya konferentsiya “Sovremennaya texnika i texnologii gorno-metallurgicheskoy otrasli i puti ix razvitiya” 14-16 maya 2013. Navoi. S. 260-262.
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