Академия наук республики узбекистан

particles of metallurgical
silicon, catalyst, solvent and the powder was proposed, 
whereby, the silicon consumed in the reaction process is compensated and 
provided a stable reaction;
4.
A method is proposed for 
the activation of the reaction medium, 
where impurities entering the reaction medium composed of metallurgical 
silicon, 
entrained from the reactor with excess of solvent, whereby level of the solvent and 
the activity of the reaction medium remains constant
, the excess solvent is 
continuously removed from the reactor through the ceramic membrane which is 
mounted in the walls of the reactor. 
5.
It has been found that the simultaneous use of technical solutions for 
milling silicon in a solvent, dosed supply of su
spension into the reactor and 
removing excess solvent together with dissolved therein impurities provides 
maintains the constant amount of silicon, a catalyst and a solvent for the duration 
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of the process of synthesis and realization of a fully continuous process of 
alkoxysilane synthesis.
6.
A method is proposed for preparing sodium ethoxide in a shielding 
medium of tetraethoxysilane and the application of freshly prepared sodium 
ethylate as catalyst in the synthesis of monosilane provides increasing of the 
process productivity by reducing the contact time of the reactants in more than 5 
times. 
7.
For the first was proposed the purification of monosilane in the 
absorber, where triethoxysilane cooled below 133К
used as an absorbent and 
separated from triethoxysil
ane by the phase separation at a temperature of 
193К
in 
the separator which is established in the top of the absorber, whereby the deep 
purification of monosilane is provided in a short manufacturing cycle. 
8.
A method of separation and control the flow of charged particles and 
device for its implementation, which allowed the ions generated by electron
-beam 
evaporation to control and management of the processes on the growth surface 
were proposed. 
9.
Increasing doping level reached to 10
19
cm
-3
by ion-stimulated 
antimony atoms embed in the crystal lattice of the silicon during the growth with 
delta doping;
10.
Experimentally proved the possibility of purposeful management of 
the degree of stress relaxation in heterostructures during their formation in ion
-
enhanced mol
ecular beam epitaxy.
11.
It was established that the formation of germanium nanoislands on the 
silicon surface by ion-
enhanced molecular beam epitaxy maximizing the density 
and narrowing of the size distribution function is achieved at 200eV of an ions 
energy. 
12.
It is found that at temperatures above 500K the thermovoltaic 
properties of thin film silicon p-n structures obtained by the ion-stimulated by 
vacuum deposition is manifested;
13.
The creation of intermediate layers with a chemical affinity and 
gradient trans
ition to adjust the thermal barrier coatings by ion
-stimulated method 
was proposed. 
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