deposition which utilizes the magnetic
field to deposit the films on the
substrate. Magnetron sputtering enables the electrons to crash with Ar
atom within a speci
fic electric field subject to ionizing the available
argon ions to make the electrons deposited to the substrate. In the year
2011, Japan Nagano National College of Technology had studied the
technique of sputtering Cu
–Sn–Zn metallic precursor and then vulca-
nizing it to manufacture the CZTS. The manufactured device has mea-
sured the CZTS based photovoltaic with an e
fficiency of 3.69%
[53]
. In
2007, Nagaoka University of Technology in Japan, after having suc-
cessfully manufacturing the CZTS based photovoltaic with an e
fficiency
of 5.43% through electron beam evaporation approach. Then they got
successfully produced the e
fficiency of 5.74% by using RF sputtering
technique
[54]
.
In the year 2010, Salome and Femandes et al.
[55]
fabricated CZTS
based thin
film photovoltaic with a power conversion efficiency of
0.68% by means of utilizing the sputtering Zn/Sn/Cu with the an-
nealing of S powder for 10 min at 525 °C beneath the N
2
carrier gas.
Katagiri has fabricated the CZTS based thin
film photovoltaic with the
best photoelectric power conversion e
fficiency of 6.8% by using va-
cuum sputtering technique. Muhunthan et al.
[56]
introduced a new
method by performing co-sputtering of the metal targets and sulfur-
ization in ambient H
2
S. Metal targets were used to assist in controlling
the composition of the
film. Compared with the traditional vacuum
deposition, sputter coating has many merits which incorporates, ma-
nipulation of the stoichiometry of elements, fabrication of
films with
better density, better use of raw materials, unfastened preference of the
deposition site, reduction in the contamination of vacuum chamber,
excessive uniformity degree of
film and suitability for the practice of
larger scale CZTS based thin
film photovoltaic. This technique is widely
used in mass production of coatings. Various simple approaches were
used for thin
film deposition apart from sputtering mechanisms, similar
approach of technique used in a simple and cost-e
ffective way is spray
pyrolysis.
3.2.5. Spray pyrolysis method
Spray pyrolysis is a simple and easy method which utilizes the
film
deposition technique at lower cost. This technique works on by heating
the surface of the substrate about 600 °C and then spraying one or more
metallic salt solutions onto the substrate surface. The higher tempera-
ture gradient will lead pyrolysis of the spray coating ensuring a thin
film deposition on substrate surface. The satisfactory and overall per-
formance of thin
film manufactured through spray pyrolysis propor-
tional to the substrate temperature. If the substrate temperature is the
too high, it will be di
fficult for the film to be adsorbing on the substrate.
when the substrate temperature is very low, the crystallization of
film
may be deteriorated. CZTS based thin
film made with the spray pyr-
olysis have better optical property through controlling the substrate
temperature inside the range of 500
–650 °C in pyrolysis
[17]
. Kamoun
made a reaction in CuCl
2
, ZnCl
2
, SnCl
2
and vulcanized them in SC
(NH
2
)
2
solution by using spray pyrolysis technique. The substances
reacted for 1 h at the substrate temperature of 340 °C and have been
annealed for 120 min at 550 °C. Eventually, the CZTS based thin
films
with a band gap of 1.5 eV were fabricated
[57]
. Spray pyrolysis is a
simple and smooth technique to perform with simple experimental
process without vacuum and gas protection devices. Hence, it's a
without problems low priced method with less fee concerned to ob-
tained thin-
film with better performance.
3.2.6. Pulsed laser deposition method
Pulsed laser deposition approach is a physical vacuum deposition
process that produce high energy pulsed laser focus at the target surface
to obtain high pressure and high temperature plasma. The plasma
emission expands in the directional nearby location and deposits the
substrate to obtain a thin
film. Moholkar et al.
[61]
measured the Cu
2
S,
ZnS, and SnS
2
powder by grinding technique, and the powder is made
to CZTS target via the solid-state reaction; they used an excimer laser
beam to bombard the target and CZTS based thin
film turned into de-
posited in a vacuum chamber, observed through annealing in N
2
+H
2
S
gas environment. The thin
film-based cells on this approach have open
circuit voltage of 585 mV, short-circuit current density of 6.74 mA/cm
2
and the
fill factor of 0.51, conversion performance of 2.02%, and band
gap of 1.52 eV. The study found that once the laser pulse frequency
become within the range of 2
–10 Hz, the grain length will growth of
pulse frequency. Due to the high energy density of the laser and the
e
ffect of better crystallization. Uniform, single, and dense crystal grains
were obtained from the prepared samples.
Compared with other techniques, this method is easy and it can
deposit the
film with ideal stoichiometric ratio via controlling the
composition of ceramic target and the oxygen pressure. It is more sui-
table for depositing the metal oxide thin
films and multi component
hetero epitaxial
films. Bombardment of high power laser beam makes
atoms or molecules to sputtered through the target with high energy
resulting in deposition of high quality thin
films at low temperature
[17]
. Synthesis of the thin
films involves sophisticated machines with
vacuum chambers making the overall process more cumbersome. This
can be avoided in the powder synthesis by wet chemical methods such
as sol gel process.
3.2.7. Sol-gel method
Sol-gel technique is very simple and cost-e
ffective method of syn-
thesizing the powder samples with needed stichometry. This method
makes the hydrolysable metal compound to react with water in certain
solvents to form as Sol by hydrolysis and polycondensation. Then the
Sol forms as liquid
film on substrate through dipping or spin-coating
technique. After gelatinization, the substrate may be transformed into
amorphous form
films through heat treatment. Many works have been
reported on the sol gel process in synthesizing composites and ceramics
for various applications. In 2007, Tanaka et al.
[57]
made the dimethyl
alcohol as solvent and the ethanolamine as stabilizer to make the sol
gelatin with cupric acetate, zinc acetate, and tin chloride and coated it
at the Molybdenum(Mo) based glass. To get better thickness, spin
coating was done for consecutive 5 times and burned at 300 °C for 5 min
in the air and annealed it at 500 °C for 1 h in an atmosphere of N
2
gas
containing 5% H
2
S. The above work has been reported with a CZTS
based thin
film with better element and the crystallinity.
In 2009, sol gel method was used and then spin-coat and drying
were carried out with the 0.35 M sol for 3 times. Then spin-coated and
dried the 1.76 M sol for 5 instances. In the stated work, CZTS based
film
with uniform surface area and the e
fficiency of 1.01% was fabricated
[59]
. In 2011, power conversion e
fficiency of 2.03% was achieved with
the aid of optimizing
film components
[60]
. Addition of MgF
2
antire-
flection layer has resulted in high energy conversion efficiency of
10.1%
[61]
. Compared with other techniques, sol gel approach has
many speci
fic advantages such as, simple process equipment without
vacuum conditions, Inexpensive system with large vicinity thin
films
and substrate with di
fferent shapes and materials. Synthesis of the CZTS
composite has its unique signi
ficances with reference to the type of
method adopted. Similarly, the substrate in which the multiple layers
deposition is also important to decide the functionality of the deposited
film. Different types of substrates are being used for CZTS deposition,
which is analyzed in detail on the following sections.
4. CZTS on di
fferent substrates
CZTS based photovoltaic devices were fabricated on di
fferent sub-
strates depending on the availability and research ideas. E
fficiency of
the fabricated device will depend on various factors, which includes the
substrates used. Adhesion of the deposited layers and its conductive
nature is very important for good device performance. Band alignment
if the devices have a signi
ficance in the performance due to its het-
erointerfaces. The band alignment of the layers and its substrates are
very important in de
fining the device characteristics. Charge trapping
M. Ravindiran, C. Praveenkumar
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