Remarkable room‐temperature magnetoresistance in silicon strip devices

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© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim 

Phys. Status Solidi RRL, 1–4 (2016) / 

DOI

 10.1002/pssr.201600253

 

www.pss-rapid.com

pss

Remarkable room-temperature  

magnetoresistance in silicon strip  

devices 

Hui Guo

1

, Lei Cui

1

, Yali Li

1

, Qiang Chen

2

, Xiaolong Fan

1

, Fangcong Wang

*, 1

, and Junshuai Li

*, 1

 

1

 Key Laboratory of Special Function Materials and Structure Design of the Ministry of Education,

 

Key Laboratory for Magnetism 

and Magnetic Materials of the Ministry of Education, and

 

School of Physical Science and Technology, Lanzhou University, 

222 South Tianshui Road, Lanzhou 730000, P.R. China 

2

 Institute of Electromagnetics and Acoustics, Department of Electronic Science, and Fujian Provincial Key Laboratory of Plasma  

and Magnetic Resonance, Xiamen University, Xiamen 361005, P.R. China 

Received 27 July 2016, revised 24 October 2016, accepted 24 October 2016 

Published online 2 November 2016 

Keywords

 silicon strip devices, room temperature magnetoresistance, carrier scattering 

                          

*

 Corresponding authors: e-mail 

[e-mail]

; 

[e-mail]

, Phone: [phone], Fax: [phone] 

© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim