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Renewable and Sustainable Energy Reviews
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Status review and the future prospects of CZTS based solar cell
– A novel
approach on the device structure and material modeling for CZTS based
photovoltaic device
M. Ravindiran
a
,
⁎
, C. Praveenkumar
b
a
Electronics & Communication Engineering Department, Vinayaka Mission's Research Foundation, Aarupadai Veedu Institute of Technology, Chennai 603104, India
b
School of Engineering, Saveetha University, Chennai 602105, India
A R T I C L E I N F O
Keywords:
CZTS
Heterojunction
Perovskite
CVD and Sputtering
A B S T R A C T
Cu
2
ZnSnS
4
(CZTS) based devices has become increasingly popular due to the better e
fficiency with different
architectures for various types of solar cells. The present work reviews and analyzes the di
fferent CZTS based
solar cells and its synthesis methods. The possible future prospects in the performance improvement of the CZTS
based solar cell is analyzed in the present work with the approach based on the novel device architecture and
material property. The novel device architecture using CZTS has electron blocking and hole blocking band o
ffset,
which can signi
ficantly improve the efficiency of the solar cell. Similarly, the first principle calculation on
various composites of the CZTS based compound has revealed some interesting property, which has shown a new
route for the CZTS based composite.
1. Introduction
1.1. About CZTS
CZTS is a kind of semiconducting compound which looks like a
greenish black crystal. It is a new version of thin
film based on next
generation photovoltaic due to fact that it is good solar absorbing
compound with better absorption coe
fficient. CZTS composite has ea-
sily available elements which signi
ficantly enables in easy fabrication of
the composite. Non-poisonous, environment pleasant, low price and
better performance are the merits of the CZTS based thin
film photo-
voltaic when compared to other photovoltaic devices. CZTS has very
good optical and electronic property which is more suitable for pho-
tovoltaic application.
Fig. 1
represents the crystal structure of the CZTS
composite
[1]
.
Fig. 1
shows the presence of the elements at various
coordinates of the crystal lattice, where the Cu is present in the all
corners and center with Zn on the top and bottom of the crystal lattice
and Sn is placed at the top, bottom and other two sides. S atoms is
placed at the center near the Cu atoms. Presence of the atoms in the
lattice crystal resembles the ratio of each element.
Elements such as Cu, Zn, Sn, and sulfur on the earth crust is 68 ppm,
79 ppm, 2.2 ppm, and 420 ppm respectively, that's much higher when
compared to In, Cd, Te of 0.16 ppm, 0.15 ppm, and 0.001 ppm respec-
tively. Hence CZTS based composite is consider to be more e
fficient
when compared to the other materials
[2]
. From crystallographic rule,
CZTS quaternary semiconducting compound has two di
fferent kind of
structure, such as kesterite structure and stannite structure. These two
shapes are identical but di
ffer from its copper, zinc arrangement from
the structure in atomic level
[3]
. Both CZTS and CIGS are very e
fficient
for making thin
film based photovoltaic application. But compared to
CZTS, CIGS compounds are having some demerits like this compounds
availability will be rare and also high cost. Especially the In and Ga
materials costs more expensive and less available. CZTS compound also
have very good optical properties with better absorption coe
fficient.
Above discussed factors with the abundance availability makes CZTS
better when compared to CIGS
[4]
.
The molar mass range of the CZTS compound is 439.471 g/mol. The
density of the CZTS compound is 4.59 g/cm
3
[5]
. Melting point temperature
range of the CZTS compound is 1260 k, which makes the composite more
suitable for very high temperature synthesis
[6]
. Band gap energy range of
the CZTS compound is around 1.5 eV which is ideal for thin
film based
photovoltaic applications. There are many approaches used for deposition
of thin
film like sulfurization, laser ablation, sputtering and evaporation
etc
… The CZTS based thin film also act as an absorber layer of photovoltaic
device due to its better absorbent property when compared to other thin
films
[7,8]
. In the year 1996, the CZTS based thin
film efficiency was cal-
culated as 0.66%. Later the e
fficiency of the CZTS was improved to 5.74%
through multisource evaporation technique in the year 2007.
https://doi.org/10.1016/j.rser.2018.06.008
Received 7 December 2017; Received in revised form 5 March 2018; Accepted 4 June 2018
⁎
Corresponding author.
E-mail address:
ravmun@gmail.com
(M. Ravindiran).
Renewable and Sustainable Energy Reviews 94 (2018) 317–329
Available online 14 June 2018
1364-0321/ © 2018 Elsevier Ltd. All rights reserved.
In the year 2008, CZTS e
fficiency was further enhanced to 6.7%
through sulfurization method
[9]
. In the year 2010, the CZTS based thin
film photovoltaic power conversion efficiency was over 9.6% with the
fabrication of the device based on ink-based technique
[10]
. In the year
2012, a team of researchers from IBM was able to reach the power
conversion e
fficiency around 11% using simple ink-based fabrication
method which was considered to be the best conversation e
fficiency for
that time. This conversation rate has justi
fied that CZTS based thin film
photovoltaic is better solar absorbent when compared to other com-
pounds based thin
film photovoltaic
[11]
. Most commonly used CZTS
based solar cell is shown in
Fig. 2
. CZTS was deposited over the Mo soda
lime glass with Cd window layer having ZnO and AZnO layer on the top
improving the overall e
fficiency of the device.
2. CZTS for photovoltaics
CZTS has very good optoelectronic property, which makes it more
appropriate for photovoltaic application. Di
fferent photovoltaic device
structures were utilized in CZTS based photovoltaic devices. CZTS
based photovoltaic have some precise characteristics more suitable for
di
fferent kind of photovoltaic devices. In recent years there has been a
lot of research on CZTS based thin
film photovoltaic. CZTS composites
are more economical and easily available in the market
[12]
. The CZTS
has the band gap of 1.4
–1.5 eV. CZTS also has a very high absorption
coe
fficient which will very well suit with multiple layer-based structure
when employed as the absorption layer of thin
film based photovoltaic.
CZTS band gap is very close to the better band gap required by the
semiconducting photovoltaic of 1.50 eV. Compared to already present
commercialized photovoltaic devices such as CdTe and CIGS, CZTS
outsmarts because of its easy availability of the elements in the earth
crust. It also holds some other interesting properties such as non-poi-
sonous and eco-friendly. Due to these characteristics, CZTS based thin
film photovoltaic are one of the better candidate materials for solar
absorbing layer. IT is anticipated to turn out to the ideal absorption
layer material of future based thin
film photovoltaic.
[13
–15]
The production cost of CZTS based thin
film photovoltaic tech-
nology is very low when compared with other types of photovoltaic
devices such as CdTe and CIGS respectively. Hence CZTS based pho-
tovoltaic devices are very crucial to be applied in a larger scale. Its high
performance, availability, low price, easy to fabricate and proper sta-
bility properties are anticipated to be the next generation thin
film
based photovoltaic
[16]
. The CZTS is in the form of kesterite structure
with promising absorber layer candidature for solar cells which can be
more suitable for low price thin
film based photovoltaic. Due to the
appropriate direct band gap of around 1.5 eV it also have an larger
absorption coe
fficient
[17]
.
The CZTS based thin
film photovoltaic device has two different
layers, the primary layer is made of organic compound and secondary
layer is made of inorganic compounds. This kind of the structure has
maximum theoretical e
fficiency of around 42%. The CZTS based thin
film absorber fabricated through different physical and chemical based
Fig. 1. CZTS Crystal structure.
Fig. 2. - Schematic representation and characteristics of CZTS thin
film based solar cell device a) device structure b) conductivity c) SEM images and d) absorbance.
source - http://www.mibsolar.mater.unimib.it/?page_id= 1434)
M. Ravindiran, C. Praveenkumar