Fotoenergetikada nanostrukturali yarimo‘tkazgich materiallar II xalqaro ilmiy anjumani


Fotoenergetikada nanostrukturali yarimo‘tkazgich materiallar



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ТГТУ II-межд конф Хайдаров Элтазаров Эргашев Абдукаримов Курбонов Турсунов Гаибназаров Курбонов Алимова

Fotoenergetikada nanostrukturali yarimo‘tkazgich materiallar

II xalqaro ilmiy anjumani 
 
19-20 noyabr 2021 yil 
35 
most intensive energy consumer and ecologically disadvantaged in the 
technological chain of silicon production. Indeed, for the production of 1 ton 
silicon it's necessary up to 15 MWh of electricity, and in the process of the 
smelting process, up to 3 tons of carbon dioxide and about 0.8‒0.9 tons of a 
microcilica, which is very environmentally dangerous, amorphous, nanoscale SiO
2
particles, are capturing by the Cleaning system out from exhausting gases. 
Note that to obtain a solar cell of the installed capacity of 1 W, it is also 
necessary to spend 96 g of shockproof glass, ~90 g of steel products, ~18 g of 
aluminum, 0,4 g of copper and almost the same tin in the solder.
The overall specific consumption of materials, without taking into account the 
costs of concreting of solar supports, amounts to our estimates of ~214 g/W, which 
significantly exceeds optimistic estimates made at the beginning of the wide use of 
SPS in the national economy in the middle of the twentieth century. 
Ways to reduce the cost and energy intensity of the operation of obtaining 
technical silicon due to the introduction of new technologies based on the use of 
natural gas, the charge in a paste-like state, return the waste to the main process or 
their useful disposal, together with owing heat in the production of concrete, 
construction mixtures, glue production ("Liquid glass") and micro and nanoscale 
silicon carbide powders are discussed. 
Proposed solar cells technology partially replaces the chemical transformation 
of technical silicon into trichlorosilane and providing its metallurgical re-melting 
with the addition of all types of waste from the existing silicon production for SC, 
including cutting of ingots, the wafers’ sludge and scrub to obtain intentionally 
strong, until solubility limit, doped by shallow donor or an acceptor impurities, a 
polycrystalline large-bonded substrate material for the subsequent deposition on 
the wafer thin film (EC base region). The films are deposited from the gas phase 
using special protection techniques and revolving technologies. One of the variants 
of this technology can be used to obtain a monosilane film base synthesized using 
sludge and scrub. 
There are discussed ways to dispose of sludge, scrub and other silicon waste 
for the manufacture of granulated silicon ‒ modification of silicon, which is a 
particles of Si powder, given to a purely mechanical contact with each other with a 
certain force with a guaranteed preservation on their surface of a nanoscale film of 
silicon dioxide.. Granulated silicon actually represents a variant of the two-
component system "Electronic crystal-phonon glass" and, judging by the results of 
a number of experiments, showed the possibility of increasing of the Seebek 
coefficient values in 10 or more times compared to the single crystal Si, with a 
decrease the thermal conductivity in 7‒9 times. It is promising to be cheap, 
resistance to radiation and demonstrates a number of other indicators of 
thermoelectric material. 
The above described thermoconvertors made of granulated silicon. can ensure 
the utilization of the thermal component of solar radiation. They can be equipped 



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