Диффузия, растворимость и электрические свойства



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3.физ-Зайнобидинов, Назиров

References:

1. Fistul, V.I. (2004) Atomy legiruyushchih primesej v poluprovodnikah [Atoms of dopants in semiconductors]. Moscow: Fizmatlit.


2. Nazyrov, D.E., Regel, A.R., Kulikov, G.S. (1987) Kremniy, legirovannyy redkozemelnymi elementami [Silicon, doping rare-earth elements]. Preprint of the A.F.Ioffe Physicotechnical Institute, Russia. Acad. Sci., No. 1122. Sankt-Petersburg. Pp. 1-56.
3. Sobolev, N. A. (1995) Structure of light-Emitting Si : Er. Technology and physical properties (Review). Physics and technics of semiconductors. Vol. 29. Issue 7. Pp. 1153-1177.
4. Glazov, V.M., Potemkin, A.I., Timoshin, G.G., Mikhailova M.S. (1997) On the possibility of improving the thermal stability of Si by doping transition metals. Physics and technics of semiconductors. Vol. 29. Issue 9. Pp. 1025-1028.
5. Libertino, S. (1995) The effects of oxygen and defects on the deep-level properties of Er in crystalline Si. Journal of Applied Physics. Vol. 78. Issue 6. Pp. 3867-3873.
6. Wong, E.M.W., liu, H.W., Man, S.Q., Pun, E.Y.B., Chung, P.S. (1998) Erbium doping in silicon by thermal in diffusion. Japanese Journal of Applied Physics. Vol. 37. Issue 6B. Pp. 3669-3672.
7. Boltaks, B.I., Bahadyrhanov, M.K., Gorodeckij, S.M., Kulikov, G.S. (1972) Kompensirovannyj kremnij Compensated silicon. Leningrad: Nauka.
8. Boltaks, B.I. (1972) Diffuziya i tochechnye defekty v poluprovodnikah [Diffusion and point defects in semiconductors]. Leningrad: Nauka.
9. Murch, G.E., Novick A.S. (ed). (1984) Diffusion in Crystalline Solids. Orlando, Academic Press, New York.
10. Lykov, A.V. (1952) Teoriya teploprovodnostii [Theory of thermal conductivity]. Moscow: Gosudarstvennoe izdatelstvo tekhniko-teoreticheskoj literatury.
11. Nazyrov, D.E., Usacheva, V.P., Kulikov, G.S., Malkovich, R.Sh. (1988) Diffuziya prazeodima v kremnii [Diffusion of praseodymium in silicon]. Pisma v Zhurnal tekhnicheskoj fiziki. Vol. 14. Issue 12. Pp. 1102-1104.
12. Azimov, G.K., Zaynabidinov, S., Nazyrov, D.E. (1989) Diffuziya skandiya v kremnii [Scandium diffusion in silicon]. Fizika i tekhnika poluprovodnikov. Vol. 23. Issue 3. Pp. 556-557.
13. Nazyrov, D.E., Kulikov, G.S., Malkovich, R.Sh. (1991) Diffuziya erbiya i tuliya v kremnii [Diffusion of erbium and thulium in silicon]. Fizika i tekhnika poluprovodnikov. Vol. 25. Issue 9. Pp. 1653-1654.
14. Nazyrov, D.E., Kulikov, G.S., Malkovich, R.Sh. (1997) Diffusion of promethium in silicon. Technical Physics Letters. Vol. 23. Issue 1. Pp. 46-50.
15. Nazyrov, D.E. (2003) Diffusion of europium in silicon. Semiconductors. Vol. 37. Issue 5. Pp. 551-552.
16. Nazyrov, D.E. (2006) Issledovanie diffuzii, rastvorimosti i elektricheskih svojstv gadoliniya v kremnii [Study of diffusion, solubility and electrical properties of gadolinium in silicon]. Elektronnaya obrabotka materialov. 6. Pp. 76-79.
15. Nazyrov, D.E. (2003) Diffusion of ytterbium in silicon. Semiconductors. Vol. 37. Issue 9. Pp. 1031-1032.
17. Zaynabidinov, S., Nazyrov, D.E., Bazarbaev, M.I. (2006) Diffuziya, rastvorimost' i elektricheskie svojstv samariya i itterbiya v kremnii [Diffusion, solubility and electrical properties of samarium and ytterbium in silicon]. Elektronnaya obrabotka materialov. 4. Pp. 90-92.
18. Zainabidinov, S., Nazyrov, D.E. (2007) Diffusion, solubility and electrical properties of scandiy and praseodim in silicon. Russian Physics Journal. Vol. 50. Issue 1. Pp. 75-77.
19. Zaynabidinov, S., Nazirov, D.E. (2007) Issledovanie diffuzii lantana v kremnii [Lanthanum diffusion study in silicon]. Izvestiya vysshih uchebnyh zavedenij. Elektronika. 1. Pp. 87-89.
20. Zaynabidinov, S., Nazirov, D.E. (2020) Vliyanie termicheskogo vozdejstviya na elektrofizicheskie svojstva kremniya, legirovannogo redkozemelnymi elementami [Effect of thermal action on electrophysical properties of silicon doped with rare earth elements]. Izvestiya vysshih uchebnyh zavedenij. Elektronika.. 1 (25). Pp. 69-72.
21. Nazyrov, D.E. (2007) Gettering of gold by samarium and gadolinium in silicon. Surface Engineering and Applied Electrochemistry. Vol. 43. Issue 3. Pp. 218-221.
22. Nazyrov, D.E. (2003) Diffusion of ytterbium in silicon. Semiconductors. Vol. 37. Issue 9. Pp. 1031-1032.
23. Nazyrov, D.E., Goncharov, S.A., Suvorov, A.V. (2000) Silicon single crystal ion-doped with ytterbium. Technical Physics Letters. Vol. 26. Issue 4. Pp. 326-327.
24. Nazyrov, D.E. (2006) Diffusion of terbium in silicon. Semiconductors. Vol. 40. Issue 6. Pp. 630-631.


Муаллифлар ҳақида маълумот:
Зайнабидинов Сирожиддин Зайнабидинович – физика-математика фанлари доктори, Андижон давлат университети Физика кафедраси профессори, ЎзР ФА академиги. E-mail: prof_sirojiddin@mail.ru
Назиров Дилшад Эргашевич – физика-математика фанлари номзоди, Ўзбекистон Миллий университети Яримўтказгичлар ва полимерлар кафедраси доценти. E-mail: dnazirov2004@mail.ru
Усачева Валентина Петровна – физика-математика фанлари номзоди, Россия Фанлар академияси А.Ф.Иоффе номидаги Физик-техника институти Яримўтказгичларда диффузия ва нуқсон ҳосил бўлиши кафедраси етакчи илмий ходими. E-mail: Val.Usacheva@mail.ioffe.ru


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