evaporator
I
e and bias potential on a substrate are shown in
Fig.
2.12.
Magnification
of the density of the ion current increases with an increase in
the bias potential as seen in the figure.
Obviously,
it is a common regularity for
Cr
in ion assisted deposition process.
At
I
esv
=
80 mA and
V
s
= 1200
V
the ion current density reaches a
maximum
value 11µA·cm
-2
.
The
curves for
Cr
has in the middle of the
range the emission currents
change,
the rate of increase of current density with
emission current decreases.
This
decrease coincides for these metals with the
beginning of formation of a melting area on the surface. All these distinctions in
ion generation by EB
-
PVD for Cr are bound to depend on its coefficient of the
evaporation, the heat losses by means of a thermoconductivity and radiation, as
well as from the effective cross-
section of ionisation of atoms of Cr. To calculate
an
ionisation coefficient of the ion assisted EB
-
PVD process, the thickness of the
deposition films was measured with a ‘Dectac 3030ST’ microprofilometer and
with direct SEM examinations of sections. Measuring the time of the deposition
process, the flow of
deposited atoms was obtained and the calculation of the
ionisation coefficient was possible. For Cr the ionisation coefficient of the flow of
settled atoms is 0.15% at the emission current 40 mA.
For practical problems it is important to estimate the complete ion current,
generated in the field of ionization near the surface of the evaporator. Using
average effective values of physical quantities it is possible to obtain the following
phenomenological formula for a complete ion current:
Ii=I
e
σ
eff
nL
(2.16)
where
I
e
is the current of the electron gun (50
–
100 mA),
σ
eff
the average value of
effective cross-section of ionisation of the evaporated atoms at collision with
electrons (~10
-17
cm
2
at energy of electrons 10 keV),
n
the average density of atoms
in th
e field of ionisation (~10
14
cm
-3
), and
L
the average length of trajectories of
electrons in the field of ionisation (~1
–
3 cm).
The morphology of the Cr films on nickel
-based supper alloy substrates was
studied using scanning electron microscopy (SEM).
Fig
. 2.13
gives an illustration,
how the microstructure of a Cr coating can be controlled by controlling the
parameters of the accelerated ions, influenced to the formation of the structure of
coatings.
Fig. 2.
13
a shows the Cr coating without bias,
I
ems = 40
mA. The grains are large
and separate. Fig. 2.
13
b: bias 800 V,
I
ems =
60 mA. The grains are smaller and
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