Remarkable room‐temperature magnetoresistance in silicon strip devices

Figure 4

 MR ratios in (a) four-top-contact and (b) seven-top-

contact measuring configurations as a function of the magnetic 

field for different applied voltages. 

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4 

H. Guo et al.: Remarkable RT magnetoresistance in silicon strip devices 

 

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4 Conclusions

 

In conclusion, we have studied the 

magnetotransport of Si strip devices using two measuring 

configurations, i.e., one top contact and ten top contacts. A 

saturating MR ratio of 

∼

400% is obtained in the one-top-

contact measurement when the applied voltage and mag-

netic field are 1.0 V and larger than 0.8 T. While the non-

saturating magnetoresistance is achieved in the ten-top-

contact measurement and the MR ratio of only 

∼

155%  

is obtained even with the magnetic field of 1.2 T at an  

applied voltage of 1.0 V. The different change trends of  

the room-temperature MRs in these two measuring con-

figurations are qualitatively understood based on the  

enhanced Hall electric field and the related influence on 

carrier scattering with the increase of the top contact num-

ber.