Modeling the temperature dependence of the discrete Landau levels in electronic semiconductors Abstract

Fig.1. Discrete Landau levels calculation program window taking into account cyclotron effective mass
2.2. Analysis of the distribution of discrete Landau levels in the conduction band taking into account the cyclotron effective mass.
Using the created “Program for calculating discrete Landau levels in the conduction bands taking into account the cyclotron effective mass”, the dependence of the distribution of the Landau levels in the conduction bands on temperature and the cyclotron effective mass is analyzed. The discovered patterns are illustrated in Fig. 3a, 3b and 3c. Consider the effect of mass changes on the density of states in a magnetic field. This can be considered as a deviation of the law of electron dispersion from parabolicity. In [5], the effective mass of electrons in n-InAs semiconductors at energies not equal to the Fermi energy was determined from the temperature dependence of the amplitude of tunneling conduction oscillations in a strong magnetic field. Figure 2 shows the dependence of the effective mass in n-InAs on the energy from [5]. Using the data in Fig. 2, it is possible to calculate the changes in the effective mass by the temperature dependence of the density of energy states in a strong magnetic field. Figure 3 shows a graph of the temperature dependence of the density of energy states for InAs with allowance for changes in the effective mass. It can be seen from Fig. 3 that changes in the effective mass with energy can strongly affect the temperature dependence of the density of energy states in a quantizing magnetic field.



Fig.2. Energy dependence of the effective mass in n-InAs

[5].

а) Т=5К

b) Т=50К

с) Т=300 К