Modeling the temperature dependence of the discrete Landau levels in electronic semiconductors Abstract

^{. . . .} - for p-Bi_0,6Sb_1,2Te_2,91Se_0,09

^{····} for p-Bi_0,5Sb_1,5Te_2,91Se_0,09

The table shows the value of the band gap for different temperatures in the range of 100-300K with and without taking into account changes in the effective mass of the density of states of the valence band.