Modeling the temperature dependence of the discrete Landau levels in electronic semiconductors Abstract

(4)

It can be seen from formula (4) that the effective mass is constant, that is, this expression is applicable only for wide-gap semiconductors. But, in narrow-gap semiconductors, the effective mass depends on energy () [11]. For example, for InSb with k = 0 and , the dependence of the effective mass on energy takes a simple form [11]:



here, .

The cyclotron frequency has the form:

(5)

Then you can determine the spectral density of states in the following form:

(6)

Thus, using formula (6), one can calculate the discrete Landau levels in semiconductors taking into account the cyclotron effective mass. Due to this, discrete Landau levels in the conduction bands of semiconductors are created by the temperature dependence.