«Mahalliy xomashyolar va ikkilamchi resurslar asosida innovatsion texnologiyalar»

 
Фойдаланилган адабиётлар 
1. Farhod F.Hoshimov, Marifat H.Urinboyeva, Akmal U.Ismadiyorov, Shavkat 
V.Abdullayev. Solid-phase method for producing polymer complex of routine. 
International journal of engineering sciences & research technology. 4(4): April, 
2015 Indiya. 
2. 
Ф.Ф.Хошимов, 
С.М.Собиров, 
М.Ф.Файзуллаева. 
Рутин:крахмал 
намуналарини қаттиқ фазада олиш ва ўрганиш. Композицион материаллар. 
Ташкент, 2018, №3. 

---

268 
PREPARATION AND PHYSICAL CHEMICAL PROPERTIES OF HIGH 
COUNDUCTIVE NANOMATERIALS 
Kamoladdin Saidov
1
*, Olim Ruzimuradov
2, 3
 
1
Institute of Material Science, Academy of Sciences of the Republic of Uzbekistan, 
Chingiz Aytmatov 2b, Tashkent, Uzbekistan. 
2
Department of Chemistry, National University of Uzbekistan, Vuzgorodo15, 
Tashkent, Uzbekistan. 
3
Department of Natural and Mathematic Sciences, Turin Polytechnic University in 
Tashkent 
 
Grafene nanomaterials have recently drawn much attention due to their unique 
electrical, mechanical, and optical properties. The transition metal dichalcogenide 
(TMD) are two dimentional (2D) semiconductor materials structure and molybdenum 
ditelluride (MoTe
2
) materials shows excellent properties such as high intrinsic 
electrical conductivity, ultrahigh theoretical surface area of 2630 m
2
g
-1
, high 
theoretical capacitance of 550 F g
-1
and high mechanical flexibility. Therefore, 
graphene and TMDs based nanomaterials might be employed as excellent electrodes 
for electrochemical, optoelectrochemical and electronic devices. For this purpose, 
electrolyte/ionic liquid based TMDs field effect transitors (FET) can effectively 
increase the operation voltage. [1] In this work, we report the fabrication of ionic-
liquid (IL) gated FET consisting of few-layer MoTe
2
. For the fabrication of the 
vertical structures of the device, the MoTe
2
was grown via chemical vapor deposition 
(CVD), transferred onto a Si/SiO
2
(300 nm SiO
2
) substrate, and patterned into 10 × 
50 μm strips as a floating gate using a photolithography and oxygen-plasma etching 
process. This method includes of the required flakes onto a dual-layer polymer stack 
Poly vinyl alcohol (PVA) and Poly methyl methacrylate (PMMA). The bottom 
polymer (PVA) layer is dissolved in water and the resulting membrane is inverted 
and positioned above the target flake. The metal electrodes forprobe contact were 
patterned on the MoTe
2 
by e-beam deposition of Cr/Au (30/50nm) followed by e-
beam lithography. For stretching test devices, a thin polyimide (PI) film was formed 
on the SiO
2
/Si wafer by spin-coating polyamic acid (PAA) followed by annealing [2]. 
The 
pristine 
ionic-liquid 
BMIMBF4 
(1-Butyl-3-methylimidazolium 
tetrafluoroborate) dropped onto MoTe
2
FET devices with channel and metal contacts. 
Top gate Ti/Au the same deposited as we mentioned above and demonstrated a 
rectification behavior of typical p junction diodes, because of the p-type and n-type 
natures of MoTe
2
. Our results indicate the possibility to utilize chemically and 
electrostatically 
highly 
coated 
for 
versatile, 
flexible, 
and 
transparent 
semiconductors [3]. 

---