Fotoenergetikada nanostrukturali yarimo‘tkazgich materiallar II xalqaro ilmiy anjumani

 
 
THE SPECTRAL DEPENDENCE CURVE OF 
PHOTOCONDUCTIVITY OF Si IN DARK AND UNDER STEADY 
ILLUMINATION AT 77 K 
 
 
Tachilin Stanislav, PhD, Sabirova Shirin,
Mavlyanov Abdulaziz , Kamalova Khurzoda 
 
Department of Microelectronics of Tashkent State Technical University, Tashkent,
Uzbekistan. 
Master’s degree student, Department of Microelectronics of Tashkent State Technical 
University, Tashkent, Uzbekistan. 
PhD, Head of Laboratory, “Uzbek-Japan Innovation Center of Youth”, Tashkent, Uzbekistan. e-
mail: [e-mail] 
Lab assistant, “Uzbek-Japan Innovation Center of Youth”, Tashkent, Uzbekistan. e-mail: 
[e-mail] 
 
Recently, studies of optical and photoelectric properties of silicon doped 
with chalcogenides, and in particular sulfur, which is traditionally known for 
forming donor centers in silicon, cause great interest among scientists and 
researchers. This interest is driven partly by the desire to study quantum-optical 
effects in doped semiconductors. Excited states of sulfur form a permanent 
spectrum, alike that of hydrogen, while basic state is located much deeper in the 
band gap of silicon unlike that created by group V impurities [1-5]. Sulfur in 
silicon is quite an interesting impurity because some optical transitions forbidden 
for shallow donor levels are allowed for the deep center of sulfur [6]. 
Photoconductivity of sulfur-doped silicon was studied in [7]. In the 
experiment the initial 
p
-type silicon wafers had a resistivity 

= 20 Ohm

cm. After 
doping with sulfur at a temperature of 1200 
0
С
, the initial silicon converted, 
respectively, into 
i-
type with 

= 10
5 
Ohm

cm and thereafter into 
n
-type with 

= 

---