Fotoenergetikada nanostrukturali yarimo‘tkazgich materiallar II xalqaro ilmiy anjumani

Fotoenergetikada nanostrukturali yarimo‘tkazgich materiallar

II xalqaro ilmiy anjumani 
 
19-20 noyabr 2021 yil 
427 
atoms diffuse in the silicon crystal lattice with an anomalously high diffusion 
coefficient. 
According to the proposed structure, the clusters were modeled in the 
Avagadro and Chem3 Dvisualiser programs, where the 3D structure of the cluster 
formed in the sublattice of the silicon crystal lattice was investigated (
Fig.2
). At 
the same time, based on the calculation, the distances R between interstitial atoms 
inside the cluster (R
O-Ni
)~4 Å, (R
O-O
)~4,56 Å, (R
Ni-Ni
)~4,56 Å, (R
Si-Si
)~2,34 
Å,(R
Ni-Si
)~5 Å. The created model of the cluster is not only in good agreement with 
the experimental results obtained, but also explains the diffusion of clusters of 
impurity nickel atoms in silicon. 
. 
Fig. 2. Sublattice of clusters of impurity nickel atoms in the crystal lattice of silicon 
Thus, the experimental results obtained, as well as the proposed physical 
model of the structure of clusters of nickel atoms, show that not only a new 
physical phenomenon has been discovered - the diffusion of clusters of impurity 
atoms in semiconductors, but also the possibility of controlling the state of these 
clusters in a semiconductor. This makes it possible to create a new class of 
photonic materials with bulk superlattices based on semiconductors with ordered 
clusters, which has unique functional capabilities for creating a new generation of 
optoelectronic, nanoelectronic, photoelectric devices and sensors of physical 
quantities. A more comprehensive study of their physical properties can open a 
number of new physical phenomena that do not exist not only in doped 
semiconductor materials, but also in semiconductors with clusters of impurity 
atoms. 
Literature 
1. Bakhadirkhanov M.K., Ismaylov B.K., Tachilin S.A., Ismailov K.A., 
Zikrillaev N.F. Influence of electrically neutral nickel atoms on electrical and 
recombination parameters of silicon // Semiconductor Physics, Quantum 
Electronics & Optoelectronics, 2020. V. 23, No 4. pp. 361-365.
2. Zikrillaev N.Z., Ismailov B.K., Isamov S.B., Tachilin S.A. Increasing the 
thermal stability of silicon during the formation of clusters of impurity nickel 
atoms // Physics of semi-conductors and microelectronics. 2019. No. 5. pp. 45-52. 

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