Fotoenergetikada nanostrukturali yarimo‘tkazgich materiallar II xalqaro ilmiy anjumani

Fotoenergetikada nanostrukturali yarimo‘tkazgich materiallar

II xalqaro ilmiy anjumani 
 
19-20 noyabr 2021 yil 
132 
Fig. 1. The spectral dependence curve of photoconductivity of Si  sample (initial boron-
doped silicon with 

 = 1 Ohm

cm) under dark conditions at a temperature of 77K in reverse 
connection mode 
When studying the curve of the photoconductivity spectrum (where the 
x
-
axis is the energy of the incident quanta 
h

 
in eV, and the 
y
-axis represents the 
values of photocurrent I
ph
in A) of the Si sample in reverse mode in dark, the 
photo response was observed at 
h

= 0,26 
eV
and further increase in 
photoconductivity could be observed at the values 
h

= 0.4 
eV
and 
h

=0.85 
eV
(Fig. 1). Figure 2 shows the curve of the photoconductivity spectrum at a constant 
intrinsic illumination from a lamp at 2
V
in the reverse connection of the diode 
structure. During experiments, the photoconductivity spectra in dark and under 
constant intrinsic illumination (Fig. 3) in the direct connection mode of the diode 
structure was also studied.
In [7], in silicon samples doped with sulfur, dark photoconductivity in 
samples with 

= 10
3
Ohm

cm
started at 
h

 
= 0.3 
eV
, and in 
i
-type Si  samples
with 

= 10
5 
Ohm

cm
under integral illumination, weak quenching was observed at 
h

 

0.35 eV, and starting from 
h

 

0.5 
eV
, the quenching depth reached 95%. 
One can assume that dark current in the forward connection mode, by and 
large, might be due to the fact that current carriers are possibly being injected from 
contact points. At voltage “switched-on” mode, electrons are caught at level 
E
i
= 
0.4 
eV
, since their concentration at level 0.25 
eV
is comparatively low, and at this 
section the investigated photocurrent is determined by holes. 
 
I
ph
, A 
h

, eV 

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