Fotoenergetikada nanostrukturali yarimo‘tkazgich materiallar II xalqaro ilmiy anjumani

Fotoenergetikada nanostrukturali yarimo‘tkazgich materiallar

II xalqaro ilmiy anjumani 
 
19-20 noyabr 2021 yil 
133 
Fig. 2. The spectral dependence curve of photoconductivity of Si  sample (initial boron-
doped silicon with 

 = 1 Ohm

cm) under stable illumination at a temperature of 77K in reverse 
connection mode 
Fig. 3. The spectral dependence curve of photoconductivity of Si  sample (initial boron-
doped silicon with 

 = 1 Ohm

cm) in dark and under steady illumination at T = 77K in direct 
connection mode 
Having analyzed the above data, one can tentatively assume that at direct 
switching mode of the diode structure, we are witnessing the so called effect of 
Dark 
Under illumination 
I
ph
, A 
h

, eV 
h

, eV 
I
ph
, A 

---

Fotoenergetikada nanostrukturali yarimo‘tkazgich materiallar

II xalqaro ilmiy anjumani 
 
19-20 noyabr 2021 yil 
134 
negative photoconductivity due to the process of injection of current carriers 
associated with level E = 0.4 
eV
[8,9]. Under constant illumination, 
photoconductivity starts at 
E
i

0.26 
eV
and decreases within the 0.4 
eV
range with a 
relatively sharp minimum at E 

0.52 
eV
, where the effect of infrared quenching of 
photoconductivity occurs. This thing clearly manifests itself on Fig. 2 under 
constant illumination when the structure is reversed. 
Having compared the photoconductivity spectra in both directions, the 
authors came to the conclusion that both curves of the photoconductivity spectrum 
are characterized by the same ionization levels, apart from the fact that we are 
witnessing a slight difference and it is that in forward direction mode we come 
across negative photoconductivity associated with the process of injection of 
current carriers from contacts. The lux-ampere characteristic of such a structure is 
well shown by authors in the research paper [10]. 
Tentative investigations of the short-circuit current and open-circuit voltage 
of 
p-n-
structures, as well as the phase transitions in the above structures, together 
with the analysis of their lux-ampere characteristic in [10], showed that these 
structures could in principle be seen as potential photodiodes and/or solar cells. 
Further calculation of the fill factor and efficiency ratio of these structures would 
pave the way for prospective application of these structures as solar cells.