Физика-техника институти, ион-плазма ва лазер технологиялари институти, самарқанд давлат

The aim of research work is to comprehensive study with the help of 
capacitance spectroscopy electrophysical properties of Si doped with impurities in 
some refractory elements, in particular, atoms Zr, Ti and Hf, their interactions with 
other electrically active and neutral impurities in silicon, influence of impurities on 
properties of silicon structures.
The object of research is monocrystalline silicon grown by the Czochralski 
method and floating zone Si zone melting, the impurity doped refractory Zr, Ti and 
Hf and MIS-structures based on them. 
The subject of research – are the DLTS and PhC spectra and Si, doped Zr, 
Ti and Hf, effects of interaction between impurities refractory elements with 
uncontrolled impurities, the physical processes in MIS-structures with impurities 
of refractory elements. 
Research methods. For research we used methods of nonstationary 
capacitance spectroscopy of deep levels, photocapacitance and IR absorption. 
Scientific novelty of research consist in the following: it is shown that the 
efficiency of the education levels of Zr, Ti, Hf in Si depends on technological 
regimes (temperature and duration of diffusion, and the speed postdiffusion 
cooling the samples); 
discovered that silicon, doped with impurities of refractory elements in the 
grown, deep levels are not observed, but subsequent high-temperature treatment in 
the temperature range 1000÷1250
о
С leads to the activation of atoms of Zr, Ti, Hf, 
and the formation of deep levels. 
it is established that the introduction of diffusion of impurities refractory 
elementov leads to a decrease in the efficiency of formation of thermal and 
radiation defects and stabilization of parameters of silicon; 
for the first time found that the presence of rare earth impurities (lanthanum 
or holmium) in the lattice of Si increases the effectiveness of education deep 
levels, connected with additionally introduced by the hafnium, titanium or 
zirconium;
it is established that the presence of impurities Zr, Ti and Hf in the amount 
of the substrate silicon MIS structures, leads to a shift of the HF C-V curves 
toward negative displacements in comparison with control samples, which 
indicates an increase in the density of surface States of MIS structures and the 
formation of positive charge at the interface Si-SiO
2
.

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