Физика-техника институти, ион-плазма ва лазер технологиялари институти, самарқанд давлат

Problem development status. To date, the attention of scientists and 
developers focused on the study of the physical processes in silicon and silicon 
structures, as well as the development of methods of increase of stability of their 
parameters, scientists from the US and Japan, Milnes A., Struthers, J. D., Weber E. 
R., Y. Tokumari to improve the photosensitivity is used, the processes of alloying 
frontier silicon layers with non-traditional impurities (Ti, Ni, Gd, Sm etc.) in low 
concentrations, followed by thermal oxidation and the application of metal 
(Al,Cu,W) of the electrodes. 
Russian scientists Lebedev A. A., Berman, L. S., V. I. Fistulas studied the 
behavior of various impurities with deep levels in silicon and determined the 
energy spectra of these levels. 
Relevance of the dissertation research to the plans of scientific-research 
works. The dissertation work performed at the National University of Uzbekistan 
in accordance with thematic plans grants tsnt RUz FM-2-038 "Study of physical 
processes in the bulk and at the interface of multilayer structures of the type metal-

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insulator-semiconductor based on silicon, alloyed with refractory elements" 
(01.01.07 - 31.12.08.),–F2-081 "the Study of patterns of defect formation in the 
monocrystalline silicon of the impurity-defect associates and the dynamic 
processes of the formation of the hidden interface semiconductor - dielectric" 
(01.07.07–31.12.11.); EF-2-08 "Study of influence of radiation on the formation 
and annealing of defects in silicon and silicon multilayer structures with impurities 
of rare earth elements" (01.07.10-.31.12.11 gg.) and EF-2-13 "the Influence of 
impurities of the titanium subgroup on electrophysical properties of silicon 
structures" (01.01.16-31.12.17.).