Defect structure of silicon with an impurity of tungsten under the influence of external factors

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Euroasian Journal of Semiconductors Science and Engineering 
Euroasian Journal of Semiconductors Science and Engineering 
Volume 2 
Issue 3 
Issue 3 
Article 9 
6-24-2020 
DEFECT STRUCTURE OF SILICON WITH AN IMPURITY OF 
DEFECT STRUCTURE OF SILICON WITH AN IMPURITY OF 
TUNGSTEN UNDER THE INFLUENCE OF EXTERNAL FACTORS 
TUNGSTEN UNDER THE INFLUENCE OF EXTERNAL FACTORS 
Sh. Daliev 
Institute of Semiconductor Physics and Microelectronics at the NUUz, [e-mail] 
A. Paluanova 
Institute of Semiconductor Physics and Microelectronics at the NUUz 
J. Ergashev 
Institute of Semiconductor Physics and Microelectronics at the NUUz 
A. Rakhimov 
Institute of Semiconductor Physics and Microelectronics at the NUUz 
Follow this and additional works at: 
https://uzjournals.edu.uz/semiconductors 
Recommended Citation 
Recommended Citation 
Daliev, Sh.; Paluanova, A.; Ergashev, J.; and Rakhimov, A. (2020) "DEFECT STRUCTURE OF SILICON WITH 
AN IMPURITY OF TUNGSTEN UNDER THE INFLUENCE OF EXTERNAL FACTORS," 
Euroasian Journal of 
Semiconductors Science and Engineering: Vol. 2 : Iss. 3 , Article 9. 
Available at: 
https://uzjournals.edu.uz/semiconductors/vol2/iss3/9 
This Article is brought to you for free and open access by 2030 Uzbekistan Research Online. It has been accepted 
for inclusion in Euroasian Journal of Semiconductors Science and Engineering by an authorized editor of 2030 
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40 
Физика полупроводников 
и микроэлектроника 
Том 2, выпуск 3 
2020 
Полупроводниковое 
материаловедение