References k. Graff, Metal Impurities in Silicon-device Fabrication, 2nd ed. Springer, Berlin, 2001


D.J. Silva et.al. Drawing the geometry of 3d transition metal-boron pairs in silicon from electron emission channeling experiments. Nuclear Instruments and Methods in Physics Research B 371 (2016) 59–



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REFERENCES

D.J. Silva et.al. Drawing the geometry of 3d transition metal-boron pairs in silicon from electron emission channeling experiments. Nuclear Instruments and Methods in Physics Research B 371 (2016) 59–62.

  • S.K. Estreicher et.al. Fundamental Interactions of Fe in silicon: First-Principles Theory. Solid State Phenomena Vols. 131-133 (2008) pp. 233-240.

  • M. Dhamrin, T. Saitoh and K. Kamisako. ICP-MS studies of metal impurities gettering mechanisms by phosphorus diffusion in multicrystalline silicon wafers. 25th European Photovoltaic Solar Energy Conference and Exhibition. 6-10 September 2010, Valencia, Spain, pp.2456-2459.


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