Peculiarities of the Current–Voltage Characteristic of

particular, (Si
2
)
1 –
x
–
y
(Ge
2
)
x
(GaAs)
y
, (Si
2
)
1 –
x
(CdS)
x
,
(InSb)
1 –
x
(Sn
2
)
x
, CdTe
1 –
x
S
x
[8], and (Si
2
)
1 –
x
(ZnSe)
x
[9]. It should be emphasized that, despite the differ-
ences, all these systems have the common feature of
weakly variband character that accounts for the
appearance of opposite ambipolar diffusion and drift
f lows.
Eventually, when the level of injection corresponds
to completely charged impurities, the characteristic
described by Eq. (3) changes to a weaker 
I
(
V
) depen-
dence close to the ohmic behavior, which has been
also observed in our experiments.
Thus, our investigation of the forward branch of cur-
rent–voltage characteristics of 
n
-GaP–
p
-(InSb)
1 –
x
(Sn
2
)
x
(0 
≤
x
≤
0.05) heterostructures showed that, at weak
excitation, the current transfer is determined by the
diffusion mechanism with allowance for the space-
charge modulation in the 
p
-base region. As the level of
carrier injection grows, an increasing role is played by
both the dielectric relaxation and ohmic relaxation of
space charge in the base region of heterostructure, and
then the charge modulation of deep impurity level
traps becomes significant that leads to the phenome-
non of injection depletion.
FUNDING
This study was supported in part by Republic of Uzbeki-
stan Grant FA-F2-003 (“Photoelectric, Thermoelectric,
and Radiative Effects in New Multicomponent Solid Solu-
1
1

---

TECHNICAL PHYSICS LETTERS 
Vol. 46 
No. 11 
2020
PECULIARITIES OF THE CURRENT–VOLTAGE CHARACTERISTIC
1127
tions with Nanocrystals Based on Crystals of Elementary
Semiconductor and Semiconductor Compounds”).
CONFLICT OF INTEREST
The authors declare that they have no conf lict of inter-
est.
REFERENCES
1. A. S. Saidov, Sh. N. Usmonov, M. U. Kalanov, A. N. Kur-
mantayev, and A. N. Bakhtybayev, Phys. Solid State