Modeling the temperature dependence of the discrete Landau levels in electronic semiconductors Abstract

RESULTS AND DISCUSSION


It was established in [6] that in p-Bi_2-xSb_xTe_3-ySe_y solid solutions, the effective mass of the density of states in the valence band strongly depends on temperature in the absence of a magnetic field. Figure 4 shows the temperature dependence of the effective mass density of states in p-Bi_2-xSb_xTe_3-ySe_y solid solutions from [6]. Using the data in Fig.4, we can calculate the temperature dependence of the band gap. Fig.5 shows the plots of the density of states at temperatures T = 100K and T = 300K. As can be seen from Fig.5, taking into account changes in the effective mass of the density of states significantly affects the density of states near the valence band. Fig.6 shows graphs of the temperature dependence of the band gap for p-Bi_2-xSb_xTe_3-ySe_y solid solutions taking into account changes in the effective mass of the density of states taken from Fig.4 [6].