Modeling the temperature dependence of the discrete Landau levels in electronic semiconductors Abstract

2.1. The program for calculating the discrete Landau levels in the conduction band taking into account the cyclotron effective mass.

Based on the constructed model, a computer program for calculating the discrete Landau levels in the conduction bands of semiconductors was created. The main window of Maple 9.5 is shown in Fig.1. The program is designed to analyze the distribution of Landau levels in the conduction band taking into account the cyclotron effective mass. The program provides the following functions: calculation and construction of the dependence of the discrete Landau levels on energy and cyclotron effective mass in the conduction band for various temperatures. The program sets the bandgap for narrow-gap semiconductors, magnetic fields, temperatures, and delta functions. The result of the calculations is the discrete Landau levels in the conduction bands taking into account the cyclotron effective mass, presented in the form of a graph in the lower part of the program window (Fig. 1).