Ministry of higher and secondary special education of the republic of uzbekistan karakalpak state university named after berdakh

MINISTRY OF HIGHER AND SECONDARY SPECIAL EDUCATION OF THE REPUBLIC OF UZBEKISTAN

KARAKALPAK STATE UNIVERSITY NAMED AFTER BERDAKH

Faculty: Master's Department Master's student: F.Safarboyeva
Department: Semiconductor Physics Scientific adviser: Kh.U.Kamalov
Academic year: 2021-2022 Specialty: Physics

ANNOTATION
Relevance and necessity of the dissertation topic. One of the urgent directions in the field of physics of semiconductors, which is rapidly developing in the world today, is the formation of volumetric nanostructures in the silicon crystal lattice, with a change in its fundamental parameters, special attention is paid to obtaining new materials. In particular, the formation of multi-charged nanoclusters in the form of silicon crystals and the discovery of its functional capabilities, as well as research on the use of this material in microelectronics, materials science and other fields is one of the urgent issues.
As an object of the study were selected plates of KEF-50; KDB-3; KDB-5; branded silicon monocrystalline, which were used in the electronics industry. As an introductory atom is selected the element of manganese.
The subject of the study is the formation of Vine autotubes under the influence of nanoclasters of manganese atoms present in a monocrystalline silicon lattice.
The purpose of the study is to control the temperature of the formation and parameters of Vine autotubes with the formation of nanoclasters in a silicon crystal lattice.
Objectives of the study: obtaining samples of silicon with nanoclusters which are formed from the electric oscillations;
determination of conditions for the formation of electric oscillations in nanocluster silicon samples;
to study the effects of temperature on electric oscillations in nanocluster silicon;
demonstration of the possibility of application of electric auto oscillations in nanocluster silicon in electronics.
Research methods. Modern methods such as electronic paramagnetic resonance spectrometry, X-ray structural analysis were used in the study of the problem. The basic electrophysical quantities of the samples were determined using the Hall effect method. IKS-21 spectrometer and electronic oscilloscope equipped with a special cryostat, which allows to control the temperature from liquid nitrogen temperature (77 K) to room temperature, were used to monitor auto-vibrations in silicon.
The scientific novelty of the research is:
it was found that the amplitude, frequency and modulation coefficient of the electric auto-vibrations in nanocluster silicon can be controlled by temperature;
it is selected the nanoclasterized Silicon 0.1÷100 MHz infra-low-frequency electric auto-vibrations under the influence of infrared radiation corresponding to the 3÷10 micrometer induction field;
due to the presence of a strong electric field around the multi-charge centers was detected the oscillation of the photoconductivity with a limit electric field strength of 120 V/cm at a high temperature of 150 K;
It is created the possibility of solid-bodied generators based on silicon samples with clusters of manganese input atoms.
The structure and scope of the dissertation. The content of the dissertation consists of an introduction, three chapters, a conclusion, a list of references and appendices. The scope of the dissertation is pages.

Scientific adviser: __________________ docent Kh.U.Kamalov
Master's student: __________________ F.B.Safarboyeva