Андижон давлат университети зиёитдинов жахонгир норбоевич

Sh.B.Utamuradova
Chairman of the Scientific Council
on Award of Scientific Degrees,
Doctor of Physical and Mathematical
Sciences, Professor


J.J.Khamdamov
Scientific secretary of the Scientific
Council on Award of Scientific Degrees,
Doctor of philosophy (PhD)


Kh.K.Aripov
Chairman of the Scientific seminar of the
Scientific Council on Award of Scientific
Degrees, Doctor of Physical and
Mathematical Sciences, Professor


INTRODUCTION (abstract of the PhD dissertation)


The aim of the research work is to determine and substantiate the optimal range of temperature changes that provide a more efficient photoelectric conversion of p-n-structures based on mono- and polycrystalline silicon.
The object of investigation is the main photoelectric characteristics of photosensitive p-n-structures based on mono- and polycrystalline silicon with varying their temperature.
The scientific novelty of the research consists the following:
complex nomograms of changes in electrical conductivity, kinetic parameters of charge carriers, width of the forbidden zone of silicon and photoelectric parameters of silicon pn-structures with different initial doping levels (10¹⁴ ÷ 10¹⁸ cm^-3) depending on the ambient temperature in the range 250 ÷ 350 K;
for the first time, the dependences of the effective mass of electrons and holes in the emitter and base layers of silicon structures were determined, which are interpreted within the framework of the theory of semiconductor physics;
the features of the change in the I – V characteristic of modern silicon photovoltaic pn-structures, its main photovoltaic parameters with a change in temperature are determined, and a satisfactory mutual correlation of the data obtained by the methods of simulated numerical calculation and the performed experiment;
determined the physical nature of the effect of metal nanoparticles with optimal parameters in shape, size, distribution density and type of metal, embedded in the emitter region of the silicon pn-structure on its temperature characteristics;
a new method of stimulating a moderate temperature of silicon photovoltaic energy converters has been scientifically substantiated due to the effective utilization of heat by convection of water and its diffusional evaporation using new technical solutions.