=900 0С from a tin solution-melt. (Fig. 4a. Saidov) bottom pad

Fig.4a. Dependence of the thickness of the epitaxial layers (h) on the size of the gap between the substrates (d): 1-on the upper, 2-on the lower substrates, at T_OC=900 ⁰С from a tin solution-melt. (Fig.4a. Saidov)
bottom pad – нижняя подложка
top pad – верхняя подложка
T_OC – Т_НК


Fig.4b. Dependence on the difference between the thicknesses of the upper and lower substrates of the epitaxial layers (∆h), on the gap between the substrates (d) at T_OC=900 ⁰С from a tin solution-melt. (Fig.4b. Saidov)



Fig. 5. Dislocation density dependence (N_i) epitaxial solid solution layers on the thickness (d) (respectively, on the content of silicon and germanium components in the composition) of films grown from a tin and gallium solution-melt at different temperatures of the beginning (Т_OC) and termination (Т_EC) crystallization. (Fig. 5. Saidov)

border backing film - граница подложка плёнка
dislocation density - плотность дислокаций
film thickness - толщина плёнки



Fig. 6. Relative change in silicon concentration of components depending on the distance from the surface of the upper substrate in the solution-melt. (Fig. 6. Saidov)
relative unit - относительная единица


Fig. 7. Dependence of the average concentration of silicon clusters in a tin solution-melt at different T_OC. (Fig. 7. Saidov)

average concentration - средняя концентрация
temperature - температура


Fig. 8. Temperature dependence of the average concentration of the DP coagulation rate. (Fig. 8. Saidov)

average coagulation rate - средняя скорость коагуляции
temperature - температура