References k. Graff, Metal Impurities in Silicon-device Fabrication, 2nd ed. Springer, Berlin, 2001


B. Ziebarth, M. Mrovec, C. Elsässer, P. Gumbsch, Interstitial iron impurities at cores of dissociated dislocations in silicon, Phys. Rev. B 92 (2015) 195308 https://doi. org/10.1103/PhysRevB.92.195308



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B. Ziebarth, M. Mrovec, C. Elsässer, P. Gumbsch, Interstitial iron impurities at cores of dissociated dislocations in silicon, Phys. Rev. B 92 (2015) 195308 https://doi. org/10.1103/PhysRevB.92.195308.

  • S. Rein, S.W. Glunz, Electronic properties of interstitial iron and iron-boron pairs determined by means of advanced lifetime spectroscopy, J. Appl. Phys. 98 (2005) 113711 https://doi.org/10.1063/1.2106017.

  • D. Macdonald, L.J. Geerligs, A. Azzizi, Effect of gettered iron on recombination in diffused regions of crystalline silicon wafers, Appl. Phys. Lett. 85 (2006) 092105 https://doi.org/10.1063/1.2181199.


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