References k. Graff, Metal Impurities in Silicon-device Fabrication, 2nd ed. Springer, Berlin, 2001



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A.A. Istratov et. al. Diffusion, solubility and gettering of copper in silicon. Materials Science and Engineering: B, Volume 72, Issues 2–3, 2000, pp.99-104


  • J. Utzig. An elastic energy approach to the interstitial diffusion of 3d elements in silicon. Journal of Applied Physics 65, 1989, pp 3868.

  • W. Wurker, K. Roy and J. Hesse. Diffusion and solid solubility of chromium in silicon. Mat. Res. Bull. Vol. 9, 1974, pp. 971-978.

  • U. Erlesand, M Ostling. Deep levels in silicon after iron silicide formation. Semicond. Sci. Technol. 10(1995), pp. 1645-1651.

  • T. M. Gibbons, D. J. Backlund, and S. K. Estreicher. Cobalt-related defects in silicon. Journal of Applied Physics 121, 045704 (2017)

  • A.G. Marinopoulos, P. Santos, J. Coutinho, Electrical Levels and Diffusion Barriers of Early 3d and 4d Transition Metals in Silicon, Solid State Phenomena, 242, (264-270), (2015).

  • A. R. Peaker et.al. Phys. Status Solidi A 209, 1884 (2012).
  • J.S. Park, S. Kim, Z. Xie, A. Walsh. Point defect engineering in thin-film solar cells. Nature Reviews Materials volume 3pages194–210(2018).


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