References k. Graff, Metal Impurities in Silicon-device Fabrication, 2nd ed. Springer, Berlin, 2001


P. Zhang, Diffusion profiles of high dosage Cr and V ions implanted into silicon. Journal of Applied Physics, 2004, 96(2), pp.1053-1058



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P. Zhang, Diffusion profiles of high dosage Cr and V ions implanted into silicon. Journal of Applied Physics, 2004, 96(2), pp.1053-1058


  • Sh. Tanaka, H. Kitagawa. Diffusion and Electrical Properties of Iron-Related Defects in N-Type Silicon Grown by Czochralski- and Floating Zone Method. Solid State Phenomena Vol 71 (2000) pp 51-72
  • Zh. Zenga, X. Ma. Effect of oxygen precipitates on dislocation motion in Czochralski silicon. Journal of Crystal Growth, 312(2010), pp.169–173


  • W. Wang, D. Yang. Effect of vacancies on copper precipitation in n-type Czochralski silicon. Phys. stat. sol. (a) 205, No. 11, 2008, pp.2662–2665.

  • D. Hwang, S. Hur, K. Lee. The influence of point defect on the behavior of oxygen precipitation in CZ-Si wafers. Journal of Crystal Growth, Volume 249, Issues 1, 2003, pp. 37-43

  • Y.Kamon, H.Harima, A.Yanase, H.Katayama-Yoshida. Ultra-fast diffusion mechanism of the late 3d transition metal impurities in silicon. Physica B: Condensed Matter, 2001, Volumes 308–310, pp.391-395.

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