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N. A. Yarykina and J. Weber. Interaction of Copper Impurity with Radiation Defects in Silicon Doped with Boron. Semiconductors, 2010, Vol. 44, No. 8, pp. 983–986



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N. A. Yarykina and J. Weber. Interaction of Copper Impurity with Radiation Defects in Silicon Doped with Boron. Semiconductors, 2010, Vol. 44, No. 8, pp. 983–986.

  • N. A. Yarykina and J. Weber. Interaction of Interstitial Copper with Isolated Vacancies in Silicon. Solid State Phenomena. 2016, Vol. 242, pp 308-311. doi:10.4028/www.scientific.net/SSP.242.308

  • F. Heinz et.al. Interstitial chromium in silicon on the micron scale. Energy Procedia. 38(2013), pp.571–575.

  • D. Macdonald, J. Tan, and T. Trupke, Imaging interstitial iron concentrations in boron-doped crystalline silicon unsing photoluminescence. J. Appl. Phys. 103, 073710 (2008).

  • D. Macdonald, J. Tan, and T. Trupke, Imaging interstitial iron concentrations in boron-doped crystalline silicon unsing photoluminescence. J. Appl. Phys. 103, 073710 (2008).

  • M. C. Schubert, H. Habenicht, and W. Warta, Imaging of Metastable Defects in Silicon. Photovoltaics, IEEE Journal of 1 (2), 168 (2011).

  • L. Scheffler, Vl. Kolkovsky, and J. Weber. Isolated substitutional cobalt and Co-related complexes in silicon. Journal of Applied Physics 113, 183714 (2013); doi: 10.1063/1.4804321.

  • Ayumi Onaka-Masada. Low-temperature annealing behavior of iron-related deep levels in n-type silicon wafers. Japanese Journal of Applied Physics 55, 021301 (2016). http://doi.org/10.7567/JJAP.55.02130


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