A theoretical study on the linearity of the Id-t curve of a Sic mesfet for sensor application

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Accepted Manuscript

A theoretical study on the linearity of the I -T curve of a SiC MESFET for sensor 

d

application

Sutanu Dutta

PII:

S0749-6036(16)31384-2

DOI:

10.1016/j.spmi.2016.12.010

Reference:

YSPMI 4713

To appear in:

Superlattices and Microstructures

Received Date:

02 November 2016

Revised Date:

08 December 2016

Accepted Date:

08 December 2016

Please cite this article as: Sutanu Dutta, A theoretical study on the linearity of the I -T curve of a 

d

SiC MESFET for sensor application, 

 (2016), doi: 10.1016/j.spmi.

Superlattices and Microstructures

2016.12.010

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ACCEPTED MANUSCRIPT

Highlights



The variation of drain current is studied with temperature.



An analytical expression of temperature sensitivity of a MESFET is derived.



The variation of temperature sensitivity is studied for various device parameters



Results shows that the linearity of Id –T curve improves for proper selection of gate length 

and biasing conditions.

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ACCEPTED MANUSCRIPT

A theoretical study on the linearity of the I

d

-T curve of a SiC MESFET for sensor 

application

Sutanu Dutta

1, 2

1. Department of Electronics, Vidyasagar University, Midnapur-721102, West Bengal, India.

2. Department of Electronic Science, University of Calcutta, 92, A.P.C. Road, Kolkata-700009, 

West Bengal, India.

Email: 

[e-mail]

Abstract

This theoretical study includes the impact of ambient temperature fluctuations on the drain current of a 

SiC  MESFET  considering  two  field  regions  under  the  gate  at  a  considerably  high  drain  field.  The 

variations of drain current of the device with ambient temperature are studied and the sensitivity of the 

device with temperature is calculated. An analytical expression of temperature sensitivity of the device is 

derived for a MESFET operating under the two region model. The variations of device sensitivity with 

temperature are presented for different gate length and applied biases. The results show that the linearity 

of drain current over ambient thermal variation improves for proper biasing conditions of gate and drain 

terminals  and  selection  of  appropriate  gate  length.  Moreover,  an  effort  has  been  made  to  compare  our 

work with an experimentally observed data reported earlier.