Figure 1. Current-voltage characteristics of ohmic contacts of Ta/Ti/Al/Ni/Au (a)
and Ti/Al/Ni/Au (b) metallization systems
The results obtained demonstrate the prospects of
using metallization with the addition of tantalum, as well
as the technology of sub-alloying. The higher value of
the specific contact resistance of metallization with sub-
alloying is explained by an insufficient increase in the
level of doping of the active layer due to incomplete ac-
tivation of the impurity. The current-voltage character-
istics of the instrument structures are shown in Fig. 2 and
3.
№ 5 (86)
май, 2021 г.
94
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