Physical review volume 05, number january 15, 1957

INTRODUCTION

E CAUSE of the high volatility of zinc at the temperatures (over 1400°C) employed in growing silicon single crystals, it has been difficult to produce crystals containing zinc by the conventional doping procedure. Early attempts to diffuse zinc into silicon showed the rate of diffusion at 1000 to 1300°C to be considerably higher than that found for zinc in ger­manium at 800 to 900°C.¹ That work also indicated that new electronic energy levels were introduced when zinc was diffused into silicon.² The present paper describes experiments in which zinc has been diffused into undoped silicon crystals and into crystals doped with boron, aluminum, gallium, and arsenic. The first part deals with diffusion and solubility, the second part with the electronic energy levels found.