Defect structure of silicon with an impurity of tungsten under the influence of external factors

Fig. 1. IR absorption spectra in control samples of n-Si and samples of n-Si  
subjected to isothermal 
annealing at 250 ° C: 1 
- initial (control) Si, 2 
–
 T
diff
 
at 1200º
С
, 3-10 min., 
4-
30 min., annealing at 250º
С
 
X-ray diffraction studies of Si  samples showed that after diffusion of RE impurities, X-
ray diffraction patterns exhibit large clusters of various shapes (Fig. 2, a). 
а
 - T
diff
 at 1200
º
С
,
b - annealing at 
250 °C, 10 min
. 
v - annealing at 
250°C, 30 min
.
g - annealing at 
250°C, 60 min
.
Fig. 2. X-ray photographs in n-Si samples 
After isothermal annealing at 250 °C, 10 min. decay of large clusters into smaller ones is 
observed (Fig. 2, b). Upon further annealing of the samples for 30 min. small accumulations are 
collected in larger formations (Fig. 2, c). The complete annealing of DL caused by RE impurities is 
accompanied by the formation of large clusters (Fig. 2, d). In this case, the concentration of interstitial 
optically active oxygen returns to its initial value (before doping with W). 

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42 
Физика полупроводников 
и микроэлектроника 
Том 2, выпуск 3 
2020 
Полупроводниковое 
материаловедение 
Thus, the correlation between a decrease in the concentration of interstitial optically active 
oxygen and deep levels associated with tungsten atoms with a change in the size of large clusters of 
defect particles of various shapes in Si upon annealing indicates the complex nature of the 
interaction of atoms of refractory elements with uncontrolled technological impurities and defects 
silicon structure. 
References
1. Vyvenko O.F., Sachdeva R. et al, Study of diffusivity and electrical properties of Zr and 
Hf in silicon, in Semiconductor Silicon-2002. 2002, The Electrochemical Society: Pennington. p. 
410-451.
2. Codegoni D., Polignano M.L., Caputo D., Riva A. et.al. Molybdenum Contamination in 
Silicon: Detection and Impact on Device Performances. Solid State Phenomena Vol. 145-146 (2009) 
pp 123-126. 
3. Gerasimenko N.N. Silicon 
–
material of nanoelectronics. M.: Tehnosfera, 2007. - p.351. 
4. Daliev Sh.H., Mamadalimov A.T., Nasriddinov S.S., Paluanova A.D., Bekmuratov M.B. 
Effect of heat treatment on the behavior of deep levels in tungsten-doped silicon. Euroasian Journal 
of Semiconductors Science and Engineering. 1 (01) 2019, pp.23-26.
 
 
 

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Document Outline

• DEFECT STRUCTURE OF SILICON WITH AN IMPURITY OF TUNGSTEN UNDER THE INFLUENCE OF EXTERNAL FACTORS
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