Natural sciences

UDC 621.315.592

EFFECT OF γ- IRRADIATION ON STATE OF CLUSTERS OF IMPURITY ATOMS OF MANGANESE AND NICKEL IN SILICON
Saparniyazova Z.M.., Allambergenov G.X., Xajibayev K.A.

Karakalpak State University named after Berdakh
Summary. The results obtained suggest that the creation of nanoclusters based on manganese atoms in the conductivity of p-type silicon. possibility of obtaining radiation-resistant material for the region of high radiation doses, preservation of its initial parameters measured before formation of nanoclusters. It is also necessary to note that magnetic and electric properties of silicon with nanoclusters are rather stable to a dose of radiation of Ф=10⁶÷10⁷ R, and the devices executed on the basis of such materials also don't change their parameters at high doses of radiation.