Физика-техника институти, ион-плазма ва лазер технологиялари институти, самарқанд давлат

INTRODUCTION (abstract of DSc thesis) 
Topicality and necessity of the thesis. Today in the world of fast-paced 
semiconductor micro - and optoelectronics one of the promising directions is the 
study of the properties of impurities that create a variety of defective centers in 
semiconductors. In this respect, research aimed at studying the influence of 
refractory impurities on the electrophysical properties of silicon structures and the 
development of measures to improve the thermal stability and radiation resistance 
parameters of silicon MIS-structures are one of the main tasks. 
Studying the interaction between impurity particles and structural defects in 
the semiconductor, the influence of heterogeneity of structure of a MIS-structure 
on the redistribution of impurities opens up the possibility of increasing the 
stability of the operating parameters of the circuits based on MIS-structures are the 
basic elements of modern electronics. In this respect, the task of scientific research, 
including in the following areas: the study of electrophysical properties of 
semiconductors alloyed with refractory elements and identification of deep levels 
generated by these impurities; the study of the influence of atoms of refractory 
elements in the processes of thermal and radiation defect formation in silicon; 
studies of the interaction atmostpheric elements with uncontrolled technological 
impurities; study of influence of atoms of refractory elements on the parameters of 
the various silicon structures. Research carried out in this direction indicate the 
relevance of the topic of this thesis. 
Relevant research priority areas of science and developing technologies 
of the Republic. The research described in the dissertation was carried out in 
accordance with the Priority directions of development of science and technology 
of the Republic of Uzbekistan: F2 "Physics, astronomy, energy and engineering" 
and PPI-3 "Energy, energy and resource conservation, transportation, engineering 
and development of modern electronics, microelectronics, Photonics and electronic 
instrumentation".