Evaluation Report Publications of the Academy of Finland 1/11

Research quality
The unit is at the international cutting edge in ALD and innovative in its precursor 
design. One notable achievement is that Intel has based its 45 nm MOSFET (metal-
oxide-semiconductor field-effect transistor), in production since 2007, on a material 
made by the unit some 14 years ago. New processes have been developed for 
ultrahigh-k and ferroelectric oxide films. 
Highly effective catalysts have been developed for aerobic oxidation of alcohols, 
and frustrated Lewis acid-base pairs are used to activate molecular hydrogen. 
Combinatorial methods have been used to aid catalyst design. The level of 
innovation in the unit is impressive. Its publication record is very strong, with a 
high hit rate in leading journals. The graduated PhD students readily find relevant 
employment.

---

55