Determination of the temperature dependence of the Fermi energy oscillations in nanostructured semiconductor materials in the presence of a quantizing magnetic field



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Sana06.01.2022
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1799-Research Materials-4940-1-2-20210426

Keywords: semiconductor, Fermi energy, quantizing magnetic field, dispersion law, two-dimensional semiconductor structures, 2D electron gas.

  1. Introduction


At present, interest in studying the properties of two-dimensional electronic systems is due to the prospects for their application in nanoscale semiconductor structures. In such systems, the quantum dimensional quantities of the dependence of the characteristics have, as a rule, an oscillating character[1-10]. In two-dimensional semiconductors, macroscopic energy characteristics such as the density of states, effective masses of electrons, and the Fermi energy depend on the thickness of the quantum well. It is assumed that the size of the thickness of the materials d will be commensurately equal to the de Broglie wavelength of the electron in low-dimensional semiconductors.

As is known, the energy spectrum of electrons has highly variable properties depending on the relative position of the Fermi level with respect to the Landau levels in two-dimensional semiconductors in the presence of a quantizing magnetic field. All electron gases have a single Fermi level , which at absolute zero temperature determines the level of filling the energy bands with electrons. As is known from the experimental and theoretical data[11-16], in two-dimensional semiconductors, the Fermi surface at absolute temperature is characterized by rather high amplitudes of the Fermi energy () oscillations. But, for a three-dimensional electron gas, oscillations will be very weak, even at low temperatures. In three-dimensional semiconductors, changes only linearly, as in classical magnetic fields.

When studying the electronic and magnetic properties of two-dimensional electronic systems, an important characteristic is the Fermi energy, which determines the main contribution to micro and nanoscale semiconductors. Therefore, the aim of this work is to research the effect of a quantizing magnetic field on the dimensional oscillations of the Fermi energy in two-dimensional semiconductor structures and to discuss the results of processing experimental data under the influence of an external action.


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