1 - LABORATORY WORK
Get acquainted with the technology and classification of IMS.
Objective: To develop the structure, topology and technology of IMS from the given schematic diagram
Summary: An integrated circuit (IMS) is the product of an attempt to create a radio element that is ultra ixcVA, ultra-robust, low-cost, and low-power.
The IMS element is a part of the IMS that is inseparable from the crystalline YOAI base in its structure and performs the function of electroradiode elements (ERE).
An IMS component is a piece of IMS that performs the function of a discrete element but is an independent product prior to assembly.
Modern chips are divided into two types depending on the process of technological preparation and performance functions: semiconductor (monolithic) and layered chips.
A semiconductor integrated circuit is an integrated circuit in which the components are made on the surface of a semiconductor wafer.
Figure 1.1. IMS topology shear and half conductors
schematic diagram in the form of .
In most cases, silicon crystals are used in the preparation of integrated circuits.
This type of integrated circuit (IS) consists of active (diodes, transistors) and passive (resistors, capacitors, inductive coils) components.
Layered IS is a chip whose components are made by transferring different layers to the base surface.
Aluminum OAside, glass and ceramics are used as dielectric bases.
Layered IS consists mainly of passive elements - resistors, capacitors and inductive coils.
RC-filters are mainly formed from them.
In addition, there is also a hybrid IS, which consists of a combination of passive elements and discrete active elements based on the chip AND dielectric.
Usually discrete active elements are referred to as active elements in IS.
These elements will consist mainly of ixcVAlicated shellless diodes and transistors.
Mixed IS is when the active elements of a chip are made on the basis of a semiconductor material, similar to a semiconductor IS, while the passive elements are made like layered chips (resistors, capacitors, inductive coils).
They are placed insulated on a common base.
There are currently two types of semiconductor IMSs: bipolar IS and metal-OAID-semiconductor (MDYa) integrated circuits.
The difference between IMSs is mainly due to the performance of the active elements and the technology of preparation of the ISs.
The basis of bipolar IS is npn YOAI npn type bipolar transistors, MDYa-type ISs are based on field-effect transistors.
The process of manufacturing an integrated circuit consists mainly of the technology of making transistors, all the remaining elements are made by making a transistor, without additional technological process.
Figure 1.2. Integral transistors
Figure 1.3. Typical bipolar integral transistor geometry (a) and cross section (b). 1- and mitter ; 2-base; 3-collector; 4th layer.
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